一种BiCMOS 11-GHz低功耗静态分频器  

An 11-GHz Low Power Static Frequency Divider in BiCMOS Technology

作　　者：王永禄[1] 杨毓军[1] 

机构地区：[1]模拟集成电路国家重点实验室中国电子科技集团公司第二十四研究所,重庆400060

出　　处：《微电子学》2006年第3期363-365,369,共4页Microelectronics

摘　　要：介绍了一种超高速、低功耗÷8静态分频器。该电路采用0．35μmB iCMOS工艺制作，晶体管fT达21GHz（Vce=1V）。该分频器在-5V电源电压下功耗为52．5mW，最高工作频率达到11GHz；在-55℃和85℃温度时，最高频率仍能达到10．2GHz；输入功率-25dBm时，可工作在2～10GHz的频率范围。An ultra-high-speed and low power static divided by-8 circuit is described. Fabricated in 0.35 9m Bi CMOS technology, the transistor has a cutoff frequency of 21 GHz at Vce, = 1 V. The frequency divider operates at up to 11 GHz with a power consumption of 52.5 mW at -5 V supply voltage, and its maximum operating frequency is up to 10.2 GHz at -55℃ and 85℃. The circuit operates at the frequency range from 2 GHz to 10 GHz for an input power of -25 dBm.

关 键 词：静态分频器 触发器 放大器 BICMOS 

分 类 号：TN433[电子电信—微电子学与固体电子学]