窄禁带稀磁半导体二维电子气的磁阻振荡研究  

Magnetoresistance oscillation of two-dimensional electrons gas in narrow gap dilute magnetic semiconductor

作　　者：朱博[1] 桂永胜[1] 周文政[1] 商丽燕[1] 仇志军[1] 郭少令[1] 张福甲[2] 褚君浩[1] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海20008 [2]兰州大学物理系,兰州730000

出　　处：《物理学报》2006年第6期2955-2960,共6页Acta Physica Sinica

基　　金：国家重点基础研究项目(批准号:2001GB309506);国家自然科学基金(批准号:60221502;10374094)资助的课题~~

摘　　要：通过改变温度和磁场方向对调制掺杂的n型Hg0·82Cd0·16Mn0·02Te/Hg0·3Cd0·7Te第一类量子阱中磁性二维电子气磁阻拍频振荡进行了深入的研究,发现不仅温度的变化能够引起磁阻拍频节点位置的变化.而且改变磁场方向,可以分别调整塞曼分裂和朗道分裂.从对拍频的分析中,可以将依赖于磁场垂直方向的朗道能级分裂和依赖于整个磁场大小的塞曼分裂区分开来.This paper study the detailed magnetoresistance oscillation in Shubnikov-de Hass （SdH） of magnetic two dimensional electron gas consisting of a modulation doped n type Hg0.82 Cd0.16 Mn0.02Te/Hg0.3 Cd0.7 Te first type quantum well by changing temperature and the angle of the sample with aspect of applied magnetic field, by which found that the changing of temperature and tilt angle will cause the varying of beating node position, By analyzing beating patterns, the magnetic angle dependent Landau splitting can be separated from magnetic magnitude dependent Zeeman splitting.

关 键 词：磁性二维电子气 自旋分裂 塞曼分裂 拍频 

分 类 号：O471.1[理学—半导体物理]