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作 者:延凤平[1] 简水生[1] 尾形健一 小池一步 佐佐诚彦 井上正崇 矢野满明
机构地区:[1]北京交通大学光波技术研究所,北京100044 [2]Bio Venture Center,Osaka Institute of Technology,Osaka,Japan [3]New Material Research Center,Osaka Institute of Technology Osaka,Japan [4]New Material Research Center,Osaka Institute of Technology Osaka,Japan,Bio Venture Center,Osaka Institute of Technology,Osaka,Japan
出 处:《物理学报》2006年第6期3013-3017,共5页Acta Physica Sinica
摘 要:利用电感耦合等离子体(ICP)装置对分子束外延(MBE)法在Sapphire衬底上生长的Zn1-xMgxO薄膜的Mg组分进行了测试.经理论分析,得到使用1次和2次检量式所确定的Zn1-xMgxO薄膜中的Mg组分的差异.将采用1次检量式的ICP测定与EPMA测定结果进行对照,表明当Mg组分x≤0·5时二者的测试结果相当一致,由此证明ICP测试结果的正确性.Mg contents of Zn1-x Mgx O film grown on A-sapphire substrates by molecular beam epitaxy were measured by inductively coupled plasma (ICP) method. Through theoretical analysis, an expression for the difference of Mg content in Zn1-x MgxO film calculated by simple and quadratic inspection formula was given. By comparing the measured results of the ICP with electron probe microanalysis ( EPMA), the consistency of ICP with simple inspection formula and EPMA was deduced when Mg content in the samples is less than 0.5, thus the correctness of the data measured by ICP was validated.
关 键 词:ZNMGO薄膜 Mg组分 分子束外延(MBE) 电感耦合等离子体(ICP)
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