(111)择优取向的Pb(Zr_(0.52)Ti_(0.48))O_3铁电薄膜的制备及研究  

Improved dielectric and ferroelectric characteristicsof highly (111)-oriented Pb(Zr_(0.52)Ti_(0.48))O_3films produced by Sol-Gel method

作　　者：郑分刚[1] 陈建平[2] 李新碗[2] 

机构地区：[1]苏州大学物理科学与技术学院,苏州215006 [2]上海交通大学区域光纤通信网与新型光通信系统国家重点实验室,上海200030

出　　处：《物理学报》2006年第6期3067-3072,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:90204006;60377013;10204016);国家863计划(批准号:2002AA122022)资助的课题~~

摘　　要：选用不同浓度的Pb(Zr0·52Ti0·48)O3溶胶,用Sol-gel法在Pt/Ti/SiO2/Si基片上沉积一层厚度不同的Pb(Zr0·52Ti0·48)O3(PZT52)过渡层,经400℃烘烤、550℃退火等程序后,再用Sol-gel法在PZT52过渡层上沉积Pb(Zr0·52Ti0·48)O3薄膜.XRD分析表明,有PZT52过渡层的Pb(Zr0·52Ti0·48)O3薄膜具有(111)择优取向的钙钛矿结构,且随着过渡层厚度的增加,Pb(Zr0·52Ti0·48)O3薄膜的(111)择优取向程度越高.SEM分析表明,当PZT52过渡层的厚度达到14nm以上,Pb(Zr0·52Ti0·48)O3薄膜结晶程度得到明显改善,平均晶粒尺寸大大增加.介电、铁电性能测试表明,与没有过渡层的Pb(Zr0·52Ti0·48)O3薄膜相比,有PZT52过渡层的Pb(Zr0·52Ti0·48)O3薄膜具有较大的介电常数和剩余极化强度,而介电损耗则较小.Highly （111 ）-oriented Pb（Zr0.52Ti0.48 ）O^3 （PZT） films with a variety of PZT buffer layer thickness were prepared by spin coating on Pt/Ti/SiO2/Si substrates with Sol-Gel process. The thickness of PZT buffer layer was found to play a significant role on grain size and orientation of Pb（Zr0.52Ti0.48 ）O^3 films. With the increasing of PZT buffer layer thickness, both crystallization and orientation were improved obviously. High dielectric constant （1278, 1kHz, for 28nm buffer）, low dielectric loss （0.023, 1kHz, for 28nm buffer）, symmetric C-V characteristics and P-E curves were obtained. Hysteresis measurements show that the remnant polarization and coercive field of the films reach 43μC· cm^- 2 and 78kV· cm^-1 , respectively.

关 键 词：PZT铁电薄膜 择优取向 过渡层 剩余极化强度 

分 类 号：O484.1[理学—固体物理] TN304.9[理学—物理]