n-type ZnS used as electron transport material in organic light-emitting diodes  

作　　者：杜鹏 张希清 孙学柏 姚志刚 王永生 

机构地区：[1]Key Laboratory of Luminescence and Optical Information, Ministry of Education,China Institute of Optoelectronic Technology, Belting Jiaotong University, Beijing 100044, China

出　　处：《Chinese Physics B》2006年第6期1370-1373,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 60476005）, the Scientific Research Foundation for Returned 0verseas Chinese Scholars, the State Education Ministry, the State Key Program for Basic Research of the Ministry of Science and Technology of China （Grant No 2003CB314707）, and the Key Project of National Natural Science Foundation of China （Grant No 50532090）.

摘　　要：This paper reports on the n-type ZnS used as electron transport layer for the organic light-emitting diodes （OLEDs）. The naphthyl-substituted benzidine derivative （NPB） and tris （8-hydroxyquinoline） aluminium （Alq3） are used as the hole transport layer and the emitting layer respectively. The insertion of the n-type ZnS layer enhances the electron injection in the OLEDs. The study was carried out on OLEDs of structures： indium-tin-oxide （ITO）/NPB/Alq3/ZnS/LiF/AL, ITO/NPB/Alq3/LiF/AL and ITO/NPB/Alq3/AL. The luminance and efficiency of the device containing this electron transport layer are increased significantly over those obtained from conventional devices due to better carrier balance.This paper reports on the n-type ZnS used as electron transport layer for the organic light-emitting diodes （OLEDs）. The naphthyl-substituted benzidine derivative （NPB） and tris （8-hydroxyquinoline） aluminium （Alq3） are used as the hole transport layer and the emitting layer respectively. The insertion of the n-type ZnS layer enhances the electron injection in the OLEDs. The study was carried out on OLEDs of structures： indium-tin-oxide （ITO）/NPB/Alq3/ZnS/LiF/AL, ITO/NPB/Alq3/LiF/AL and ITO/NPB/Alq3/AL. The luminance and efficiency of the device containing this electron transport layer are increased significantly over those obtained from conventional devices due to better carrier balance.

关 键 词：OLEDS n-type ZnS electron transport layer LUMINANCE efficiency 

分 类 号：O47[理学—半导体物理] TN312.8[理学—物理]