半导体激光器的高精度温度控制优化设计  

The Technology of High Precision Temperature Control of Semiconductor Laser

作　　者：李建威[1] 姚和军[2] 韩建国[1] 张志新[2] 李健[2] 

机构地区：[1]北京化工大学,北京100029 [2]中国计量科学研究院,北京100029

出　　处：《现代测量与实验室管理》2006年第3期16-18,共3页

摘　　要：温度对半导体激光器(LD)发射器的特性有较大的影响,随着温度的增加,阈值电流呈指数增加,输出功率和斜率分别呈抛物线和指数关系递减,同时特征温度也减少,波长随温度的漂移系数为0.24nm/℃[1]。为了使半导体激光器的激光波长和输出功率稳定,必须对其温度进行高精度的控制。利用积分分离式PID控制原理设计了温度控制系统,控制精度达到±0.1℃,与普通PID控制器相比,极大的提高了系统的瞬态特性。The temperature greatly influences the properties of the semiconductor laser. With the temperature uprising, current improved as exponent, power and slope descended as parabola and exponent, character temperature descended too, the wavelength of excursion with temperature is 0. 24 nm/℃. In order to make wavelength and power stabilization, it is necessary to control temperature as high precision. The temperature control must be very rigorous so that steady power of semiconductor laser is got. The temperature control system that designed according to integral separate PID control system is discussed in this paper. The precision of controlled temperature is 0C ,the response characteristic of the system with PID control system is better than that of the system without PID control system.

关 键 词：半导体激光器 温度控制 PID控制 瞬态特性 

分 类 号：TN248.4[电子电信—物理电子学]