A Novel Super-junction LDMOST Concept with Split p Columns  

A Novel Super-junction LDMOST Concept with Split p Columns

在线阅读下载全文

作  者:陈林 张波 郑欣 

机构地区:[1]School of microelectronics and solid-state electronics, University of Electronic Science and Technology of China Chengdu 610054 China

出  处:《Journal of Electronic Science and Technology of China》2006年第2期169-172,共4页中国电子科技(英文版)

基  金:Supported by National Natural Science Foundation of China. (No. 60576052) and The Key Program Project of National Science Foundation of China. (No. 60436030)

摘  要:In this paper, we propose a novel low on-resistance Super Junction (S J) Lateral Double-diffusion MOSFET (LDMOST) which has split p column structures with rated voltage of 60-100V. The key feature of this new structure is that the split p column super junction primarily provides the low on-resistance path and it just locates at the surface of the drift region rather than the entire drift region. The manufacturing process of the device is relatively simple and is compatible with the Bi-CMOS process. Three dimension device simulations indicate that this structure can achieve a low specific on-resistance of 11.5 mΩ·cm^2 at a gate voltage of 5 V compared with 27.7 mΩ·cm^2 for the conventional LDMOST at the breakdown voltage of 80V.In this paper, we propose a novel low on-resistance Super Junction (S J) Lateral Double-diffusion MOSFET (LDMOST) which has split p column structures with rated voltage of 60-100V. The key feature of this new structure is that the split p column super junction primarily provides the low on-resistance path and it just locates at the surface of the drift region rather than the entire drift region. The manufacturing process of the device is relatively simple and is compatible with the Bi-CMOS process. Three dimension device simulations indicate that this structure can achieve a low specific on-resistance of 11.5 mΩ·cm^2 at a gate voltage of 5 V compared with 27.7 mΩ·cm^2 for the conventional LDMOST at the breakdown voltage of 80V.

关 键 词:LDMOST low on-resistance path Super Junction (SJ) sprit p column 

分 类 号:TN3[电子电信—物理电子学]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象