云南高校图书馆联盟文献共享服务平台- LDMOST

LDMOST: 作品数：13被引量：6H指数：2; 导出分析报告; 相关领域：电子电信更多>>; 相关作者：罗晋生唐本奇熊平高玉民卢豫曾更多>>; 相关机构：电子科技大学西安交通大学西北核技术研究所中北大学更多>>; 相关期刊：《固体电子学研究与进展》《Journal of Semiconductors》《微电子学》《Chinese Physics B》更多>>; 相关基金：国家自然科学基金中国博士后科学基金江苏省自然科学基金更多>>

An improved SOI trench LDMOST with double vertical high-k insulator pillars: 《Journal of Semiconductors》2018年第9期61-66,共6页Huan Li Haimeng Huang Xingbi Chen; supported by the National Natural Science Foundation of China(Nos.51237001,51607026);the Fundamental Research Funds for the Central Universities(No.ZYGX2016J048); An SOI trench LDMOST（TLDMOST）with ultra-low specific on-resistanceis proposed.It features double vertical high-k insulator pillars（Hk1 and Hk2）in the oxide trench,which are connected to the source electrode and dr...; 关键词：breakdown voltage HIGH-K specific on-resistance trench LDMOST

Electric field optimized LDMOST using multiple decrescent and reverse charge regions: 《Journal of Semiconductors》2014年第7期65-68,共4页成建兵夏晓娟蹇彤郭宇峰于舒娟杨浩; supported by the National Natural Science Foundation of China(No.61274080);the Natural Science Foundation of Jiangsu Province(No.BK2011753);the Postdoctoral Science Foundation of China(No.2013M541585); A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field dist...; 关键词：LDMOST multiple decrescent and reverse charge regions electric field breakdown voltage ON-RESISTANCE

嵌入式非平衡超结LDMOST: 《固体电子学研究与进展》2014年第2期170-173,共4页王文廉王玉张晋文; 国家自然科学基金资助项目(61106077); 提出一种嵌入式非平衡超结器件结构,在n型外延层上通过高能注入间隔的p型埋层,形成嵌入式的超结结构。n型电荷与p区在四周形成电荷耗尽,相对于常规的超结更利于提高漂移区浓度,改善导通电阻;同时,器件的表面是完整的n型区,缓解了场氧工...; 关键词：功率器件嵌入式非平衡超结衬底辅助耗尽效应

SJ-LDMOST中的衬底辅助耗尽效应: 《电源技术应用》2012年第8期45-47,共3页成建兵; 江苏省自然科学基金资助(No:BK2011753); SJ-LDMOST是半导体功率集成技术的核心器件之一,但其击穿电压和比导通电阻之间的优化决定于衬底辅助耗尽效应的消除。这里在分析衬底辅助耗尽效应机理的基础上,将业界消除衬底辅助耗尽效应的主要方法分成两类,并提出通过引入新构造提高...; 关键词：SJ—LDMOST 功率集成电路衬底辅助耗尽效应击穿电压

New CMOS compatible super-junction LDMOST with n-type buried layer被引量：1: 《Chinese Physics B》2007年第12期3754-3759,共6页段宝兴张波李肇基; Project supported by the National Natural Science Foundation of China （Grant No 60436030） and the Key Laboratory for Defence Science and Technology on Military Simulation Integrated Circuits （Grant No 9140C0903010604）.; A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect t...; 关键词：super-junction LDMOST n-type buried layer REBULF breakdown voltage

New Lateral Super Junction MOSFETs with n^+-Floating Layer on High-Resistance Substrate被引量：2: 《Journal of Semiconductors》2007年第2期166-170,共5页段宝兴张波李肇基; 国家自然科学基金资助项目(批准号:60436030,60576052)~~; A new super junction LDMOST structure that suppresses the substrate-assisted depletion effect is designed with an n^＋-floating layer embedded in the high-resistance p-type substrate by implanting phosphor or arsenic....; 关键词：super junction LDMOST substrate-assisted depletion n^＋-floating layer breakdown voltage

A Novel Super-junction LDMOST Concept with Split p Columns: 《Journal of Electronic Science and Technology of China》2006年第2期169-172,共4页陈林张波郑欣; Supported by National Natural Science Foundation of China. (No. 60576052) and The Key Program Project of National Science Foundation of China. (No. 60436030); In this paper, we propose a novel low on-resistance Super Junction （S J） Lateral Double-diffusion MOSFET （LDMOST） which has split p column structures with rated voltage of 60-100V. The key feature of this new stru...; 关键词：LDMOST low on-resistance path Super Junction （SJ） sprit p column

INCREASING BREAKDOWN VOLTAGE OF LDMOST USING BURIED LAYER: 《Journal of Electronics(China)》2003年第1期29-32,共4页Han Lei Ye Xingning Chen Xingbi (Institute of Microelectronics, University of Electrical Science and Technology of China,, Chengdu 610054); Supported by the National Natural Science Foundation of China(No.69776041); A new LDMOST structure, named B-LDMOST that has a buried layer under the drain is proposed. The buried layer is not connected to the drift region, so it can optimize the vertical field distribution and increase breakd...; 关键词：B-LDMOST Buried layer Breakdown voltage Ou-resistance Switching time

LDMOS晶体管新型器件结构的耐压分析被引量：3: 《Journal of Semiconductors》1999年第9期776-779,共4页唐本奇罗晋生耿斌李国政; 本文提出了一种新型的内置ＦＲ／ＪＴＥ横向ＤＭＯＳ结构，并对其进行了耐压分析，结果表明，该结构具有与ＲＥＳＵＲＦ器件相媲美的击穿电压，并且工艺简单，受工艺参数波动的影响较小，相对于内场限环结构，其耐压高且导通电阻低。; 关键词：LDMOS晶体管结构 LDMOST 耐压分析

内场限环结构 LDMOST 的耐压分析: 《西安交通大学学报》1997年第9期67-71,共5页唐本奇高玉民罗晋生; 国家自然科学基金; 文章讨论了内场限环结构ＬＤＭＯＳＴ的参数优化和器件耐压问题，采用直接积分的方法推导出内场限环表面掺杂浓度的精确优化公式．同时，对ＬＤＭＯＳＴ的优化结构开展了耐压分析．与国外同类工作比较，此方法简便直观，计算结果与二维...; 关键词：LDMOST 击穿电压内场限环结构耐压分析

LDMOST