New CMOS compatible super-junction LDMOST with n-type buried layer  

作　　者：段宝兴 张波 李肇基 

机构地区：[1]Microelectronics Institute, Xidian University, Xi'an 710071, China [2]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

出　　处：《Chinese Physics B》2007年第12期3754-3759,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 60436030） and the Key Laboratory for Defence Science and Technology on Military Simulation Integrated Circuits （Grant No 9140C0903010604）.

摘　　要：A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.

关 键 词：super-junction LDMOST n-type buried layer REBULF breakdown voltage 

分 类 号：O57[理学—粒子物理与原子核物理]