Electric field optimized LDMOST using multiple decrescent and reverse charge regions  

作　　者：成建兵 夏晓娟 蹇彤 郭宇峰 于舒娟 杨浩 

机构地区：[1]School of Electronic Science & Engineering,RF Integration and Micro Assembly Engineering Laboratory,Nanjing University of Posts and Telecommunications [2]National Application-Specific Integrated Circuit ASIC System Engineering Research Center,Southeast University

出　　处：《Journal of Semiconductors》2014年第7期65-68,共4页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61274080);the Natural Science Foundation of Jiangsu Province(No.BK2011753);the Postdoctoral Science Foundation of China(No.2013M541585)

摘　　要：A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions＇ lengths.A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions＇ lengths.

关 键 词：LDMOST multiple decrescent and reverse charge regions electric field breakdown voltage ON-RESISTANCE 

分 类 号：TN386[电子电信—物理电子学]