LDMOS晶体管新型器件结构的耐压分析  

Optimal Analysis of New Structure of Lateral High\|Voltage Device

作　　者：唐本奇[1] 罗晋生[1] 耿斌[2] 李国政[2] 

机构地区：[1]西安交通大学,西安710049 [2]西北核技术研究所,西安710024

出　　处：《Journal of Semiconductors》1999年第9期776-779,共4页半导体学报（英文版）

摘　　要：本文提出了一种新型的内置ＦＲ／ＪＴＥ横向ＤＭＯＳ结构，并对其进行了耐压分析，结果表明，该结构具有与ＲＥＳＵＲＦ器件相媲美的击穿电压，并且工艺简单，受工艺参数波动的影响较小，相对于内场限环结构，其耐压高且导通电阻低。A new structure of LDMOST with internal FR/JTE termination is set forth, and the parameters of the FR/JTE are optimized. It is shown that under optimal condition, the breakdown voltage of the new device is higher than that of the device using two internal FLRs, and is approach to that of RESURF devices, and the on\|resistance of the new device is smaller than that of the device using two internal FLRs.

关 键 词：LDMOS晶体管 结构 LDMOST 耐压分析 

分 类 号：TN386.03[电子电信—物理电子学]