电流拥挤效应对GaN基发光二极管可靠性的影响  

Effect of Current Crowding on the Reliability of GaN-based LEDs

作　　者：艾伟伟[1] 郭霞[1] 刘斌[1] 董立闽[1] 刘莹[1] 宋颖娉[1] 沈光地[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院北京市光电子技术实验室,北京100022

出　　处：《激光与红外》2006年第6期491-494,503,共5页Laser & Infrared

基　　金：北京市教育委员会科技发展计划重点项目(KZ200510005003);国家基金(60506012);科技新星计划项目(2005A11);北京优秀人才计划项目(20051D0501502)

摘　　要：文中报道了绝缘蓝宝石衬底上的GaN基发光二极管(LEDs)中,由于横向电阻的存在造成了靠近n型电极台面边缘局部区域电流拥挤,为此从焦耳热和金属电迁移两方面研究了电流拥挤效应对器件可靠性的影响,加速寿命实验结果表明:电流均匀扩展可以使可靠性得到有效改善。Current crowding near the mesa edge due to the lateral resistance of GaN-based LEDs on the insulating sapphire substrates effects not only the LEDs performance but also the reliability characteristic. The effect or current crowding on the device reliability is reported from the Joule heating and the electromigration of contact metal in a localized region. In addition, the results of accelerated life test show the improvement of reliability through effective current spreading.

关 键 词：GAN 发光二极管 可靠性 电流拥挤 

分 类 号：TN383.1[电子电信—物理电子学]