老化产生的深能级对GaP纯绿发光二极管发光效率的影响  

THE INFLUENCE OF DEEP LEVELS DUE TO THE DEGRADATION ON THE LUMINESCENCE EFFICIENCY OF GaP PURE GREEN LIGHT-EMITTING DIODES

作　　者：苏锡安[1] 高瑛[1] 赵家龙 刘学参 

机构地区：[1]中国科学院长春物理研究所激发态物理开放实验室

出　　处：《光子学报》1996年第6期514-517,共4页Acta Photonica Sinica

基　　金：国家自然科学基金;中国科学院长春物理所激发态物理开放实验室基金

摘　　要：测量了ＧａＰ纯绿发光二极管老化前后的可见和近红外发光光谱，研究了老化产生的深能级的来源及其对二极管发光效率的影响．在老化后的发光光谱中观测到６５０ｎｍ和１２６０ｎｍ发光带，发现１２６０ｎｍ发光带的发光强度随老化时间的增加而增强。实验结果表明老化产生的与磷相关的深能级严重地影响了ＧａＰ纯绿ＬＥＤ的发光效率。The visible and the near-infrared electroluminescecnce spectra of GaP pure green(PG)light-emitting diodes(LEDs)were measured before and after degradation. The origins and influence ofdeep levels resulting from degradation on the luminescence efficiency of GaP PG LEDs were studied.The 650 and 1260 nm luminescence band was observed in the spcetra after degradation. Theluminescence intensity of the 1260nm band increases with aging times.The deep levels related to thephosphorus due to degradation strongly influence on the luminescence efficiency of GaP PG LEDs.

关 键 词：深能级 纯绿 发光二极管 电致发光 磷化锗 

分 类 号：TN364.2[电子电信—物理电子学]