Bi_(12)GeO_(20)晶体的位错蚀斑与对称群  

THE ETCH PITS OF DISLOCATIONS AND SYMMETRY GROUP IN Bi_(12)GeO_(20) CRYSTAL

作　　者：张杏奎[1] 刘显杰[1] 徐秀英 吕鹏[1] 

机构地区：[1]南京大学物理系,固体物理研究所,南京210008

出　　处：《物理学报》1996年第8期1366-1371,共6页Acta Physica Sinica

摘　　要：用化学浸蚀法系统的研究了Bi_(12)GeO_(20)晶体{100},{100},{111}等晶面独特浸蚀斑规律并用对称群理论进行分析.理论预示的蚀斑形态与实验结果符合很好.显示位错蚀斑是由{112}晶面组成,即晶体的惯态面为{112}.The etch pits of dislocations in Bi12GeO20 crystal at (100), (110) and (111) planes have been studied by means of chemical etching. The pattern of etch pits are very special compared with the common cubic system crystal, and we have analyzed it with theory of symmetry group. The patterns of etch pits by theoretical analysis are in conformity with the experiment. It shows that the pettern of etch pits of dislocations consists of {112} planes. It is clear that the habitual plane of crystal of Bi12-GeO20 crystal is {112} plane.

关 键 词：锗酸铋 蚀斑 晶体 位错 对称群 

分 类 号：O772[理学—晶体学]