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作 者:顾诠[1,2,3] 王佑祥[1,2,3] 崔玉德[1,2,3] 陈新[1,2,3] 陶琨[1,2,3]
机构地区:[1]清华大学材料研究所,北京100084 [2]中国科学院半导体研究所,北京100083 [3]中国科学院表面物理国家重点实验室,北京100080
出 处:《物理学报》1996年第5期832-843,共12页Acta Physica Sinica
基 金:国家自然科学基金资助的课题
摘 要:在超高真空中用电子束蒸发在抛光的(1102)取向的蓝宝石(α-Al_2O_3)衬底上蒸镀500nm的Ti膜,在恒温炉中退火,然后用XRD(包括一般的和小角度的X射线衍射),AES(俄歇电子谱,包括深度剖面分布和通过界面的谱形分析)和SIMS(二次离子质谱)等表面分析技术详细研究了从室温至850℃,Ti与α-Al_2O_3的固相界面反应.结果表明室温及300℃,30min退火已有反应,Al_2O_3被Ti还原而在界面析出Al.600℃,30 min退火生成了Ti_3Al和TiO_2。850℃,30 min退火时Ti_3Al的生成量即随温度而增加,并产生多种氧化钛(Ti_xO_y)和Al_2TiO_5(Al_2O_3·TiO_2)等新相.850℃,4h退火除上述各相外又生成了Ti_2Al和TiAl_3。本文首次系统地提出了不同反应温区相应的化学反应式,讨论了采用体材料数据作热力学计算来预言Ti/α-Al_2O_3界面反应的局限性。A 500 nm titanium film was deposited on a polished (1102) oriented sapphire (α-A12O3) substrate using electron beam evaporation under ultra high vacuum conditions. Isothermal furnace annealing has been used to cause the solid-state reaction between Ti film and sapphire substrate. Inter-facial reaction of Ti/α-Al2O3 was studied in detail from room temperature (RT) to 850 ℃ using XRD (including general and low incident angle X-ray diffractions), AES (Auger electron spec-troscopy, including the depth profile and the shape analysis of Auger spectra across the interface) and SIMS (Secondary ion mass spectrometry) etc. surface analysis techniques. It was found that at RT and after 300℃ 30 min. annealing, Al2O3 was reduced by titanium to produce metallic A1 accumulated at the interface. After 600 ℃ 30 min. annealing, Ti3Al and TiO2 were formed. After 850 ℃ 30 min annealing , the amount of Ti3A1 is increased with the temperature, at meantime the new phases of a number of titanium oxides(TixOy)and Al2TiO5(Al2O3·TiO2) were detected. After 850℃ 4 h annealing, it indicates that apart from the phases described above, Ti2Al and TiAl3 were formed. We suggest the chemical equations of reaction corresponding to the different temperature zones and discuss the limitation of the prediction from thermodynamic consideration by using bulk material data.
分 类 号:TQ164.2[化学工程—高温制品工业]
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