CN薄膜结构特性的研究  

STRUCTURAL CHARACTERIZATION OF THE CN FILMS

作　　者：冯嘉猷[1] 龙春平[1] 张芳伟 郑毅 范玉殿[1] 

机构地区：[1]清华大学材料科学与工程系,北京100084

出　　处：《物理学报》1996年第6期1068-1072,共5页Acta Physica Sinica

基　　金：国家自然科学基金资助的课题

摘　　要：利用离化团束(ICB)方法在Si(111)衬底上生长了CN薄膜。X光衍射(XRD)分析表明薄膜呈β-C_3N_4晶态结构,X射线光电子能谱(XPS)测定薄膜含N量为20％,并且观察到C1_s和N1_s芯能级谱中存在双峰。红外吸收光谱呈现C—N和C≡N的吸收峰。高能反射式电子衍射(RHEED)也证实薄膜中存在晶态物质。薄膜的努氏显微硬度值达到6200kgf·mm^(-2)。Growth of CN films on Si (111) is realized by ionized cluster beam (ICB) deposition. X-ray diffraction (XRD) shows the occurence of β-C3N4 crystal structure in the films. X-ray photoelectron spectra (XPS) shows 20% N incorporated into the films and two peaks are observed in C 1s and N 13, core level spectra respectively. Single bonded CN and triple bonded CN were identifies by infrared absorption spectra. Reflection high-energy electron diffraction (RHEED) demonstracted the coexistence of amorphous and crystalline CN compounds. The Knoop hardness of CN films reaches 6200 kgf/mm2.

关 键 词：薄膜 CN膜 结构 XRD ICB 

分 类 号：O484.5[理学—固体物理]