厚膜电阻材料的物化特性对钌系厚膜电阻应变系数的影响  

The effects of the physical and chemical characteristics of the conductive phase on the gauge factor(GF) of the Ru-based thick-film strain resistor

作　　者：陈建群[1] 马以武[1] 

机构地区：[1]中国科学院合肥智能机械研究所传感技术国家重点实验室,安徽合肥230031

出　　处：《功能材料》2006年第6期902-904,共3页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(60374050)

摘　　要：通过对厚膜电阻导电相、玻璃相的粒径控制、粒径比搭配以及在导电相、玻璃相中掺杂，研制成一种厚膜力敏电阻浆料，其应变系数GF可达15～17、工作温度可达150℃。介绍了厚膜力敏应变系数的测量方法，研究了厚膜电阻材料的物化特性对钌系厚膜电阻应变系数的影响，探讨了提高应变系数的技术途径，同时，对其导电机理作了简要的阐述。The effects of the physical and chemical characteristics of the conductive phase on the gauge factor （GF） of the Ru-based thick-film strain resistor has been discussed. It is experimented that there is a close correspondence between the gauge factor （GF） and the physical and chemical characteristics. The choice and optimize of thick-film material to prepare nano power, the choice and optimize of the temperature and time in the couse of solid reactivity to control the range of paticle sizes,the effective mixture of multiple paticle sizes of the conductive phase and the glass phasercharactertistics with addition can increase the gauge factor （GF） of thick film resistance.

关 键 词：厚膜应变电阻 物化特性 掺杂改性 应变系数 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置] TN4[自动化与计算机技术—控制科学与工程]