PZT薄膜反提拉生长的PbO挥发与退火条件研究(英文)  

Pb volatilization and annealing conditions research of pzt thin fil ms grown by reverse dip-coating method

作　　者：陈祝[1] 杨成韬[2] 王升[1] 杨邦朝[1] 

机构地区：[1]成都信息工程学院通信工程系,四川成都610225 [2]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《功能材料》2006年第6期966-971,共6页Journal of Functional Materials

基　　金：ChineseNationalResearchGrantfrom973projects(5130Z02)

摘　　要：通过一新的溶胶-凝胶工艺:反提拉涂膜方法,在Si(100)和Pt(111)/Ti/SiO2/Si(100)基片上制备了PZT(Zr/Ti=52/48)铁电薄膜,并研究了退火工艺及其PbO的挥发对薄膜微结构、表面形貌、取向、及铁电性能的影响。本文首次提出并应用反提拉涂膜技术制备了PZT薄膜,此技术相对于传统的溶胶-凝胶工艺具有以下几方面的优点:操作控制简单方便、成本低、原料利用率高、无污染等。研究发现PZT薄膜通过增加PT晶种层后可以抑制PbO的挥发,同时薄膜呈现较强的(110)取向;在薄膜的退火处理过程中还发现氧气氛有助于降低PbO的挥发、促进晶粒的长大和降低钙钛矿的晶化温度,在氧气氛中退火的PZT薄膜显示了很好的铁电性能,其剩余极化强度明显增大而矫顽场只有极小的增加。This paper studied the PbO volatilization and annealing effects on the microstructures, surface morphologies, preferred orientation and ferroelectric characteristics of lead zirconate titanate （PZT, Zr/Ti= 52/48） films, which were deposited on Si （100） and Pt（111）/Ti/SiO2/Si（100） substrates by a new reverse dip-coating method of sobgel process. The method was first proposed and applied to coat films. It has several advantages over the conventional sol-gel coating method, including; convenient processing control, simplicity, low cost. less pollution, etc. We found that Pb loss of PZT films can be greatly suppressed by adding PT seeding layer, and films showed high （110） orientation. During the films annealing treatment, it was also found that the oxygen ambient assisted in decreasing PbO volatilization, promoting grains growth and lowering perovskite phase crystallization temperature. The PZT films annealed in O2 flow showed better ferroelectric properties with a remarkable increase of remnant polarization and a slight increase of coercive field.

关 键 词：PZT 溶胶-凝胶 反提拉涂膜 PbO挥发 铁电薄膜 

分 类 号：TQ026.4[化学工程] O484[理学—固体物理]