脉冲激光沉积方法生长硅基ZnO薄膜的特性(英文)  

Growth and characteristics of zinc oxide thin fil ms on silicon(111) by pulsed laser deposition

作　　者：何建廷[1] 庄惠照[1] 薛成山[1] 田德恒[1] 吴玉新[1] 刘亦安[1] 胡丽君[1] 薛守斌[1] 

机构地区：[1]山东师范大学半导体研究所,山东济南250014

出　　处：《功能材料》2006年第6期978-980,985,共4页Journal of Functional Materials

基　　金：ThisworkissupportedbyNationalNatureScienceFoundationofChina(90301002,90201025)

摘　　要：用脉冲激光沉积法(PLD)在n型硅(111)平面上生长ZnO薄膜。X射线衍射(XRD)在2θ=34°处出现了唯一的衍射峰,半高宽为0.75°;傅里叶红外吸收(FTIR)在414.92cm-1附近出现了对应Zn—O键的红外光谱的特征吸收峰;光致发光(PL)测量发现了位于370和460nm处的室温光致发光峰;扫描电子显微镜(SEM)和选区电子衍射(SAED)显示了薄膜的表面形貌以及晶格结构。利用PLD法制备了具有c轴取向高度一致的六方纤锌矿结构ZnO薄膜。ZnO thin films were deposited on n-Si（lll） substrates by pulsed laser deposition （PLD）. X-ray diffraction （XRD） showed that there was only one sharp diffraction peak at 20=34° with the full width at the half maximum （FWHM） of 0.75°. Fourier transform infrared spectrophotometer （FTIR） presented a intensely cliffy absorption peak located at 414.92nm which was resulted from Zn-O bonds. Photoluminescence （PL） gave us two light emission bands, corresponding to the wavelength of 370 and 460nm. Scanning electron microscopy （SEM） and selected-area electron diffraction （SAED） were employed to analyze the morphology and crystal lattice structure of ZnO thin films. ZnO thin films which had an excellently c-axis preferred orientation and a hexagonal wurtzite structure were prepared.

关 键 词：PLD ZNO 薄膜 六方纤锌矿结构 

分 类 号：TN304.21[电子电信—物理电子学] O484.1[理学—固体物理]