氮化镓粉末的溶胶凝胶法制备及其结构  

Structure and Synthesis of GaN Powder by Sol-Gel Method

作　　者：刘亦安[1] 薛成山[1] 庄惠照[1] 张晓凯[1] 田德恒[1] 吴玉新[1] 孙莉莉[1] 艾玉杰[1] 王福学[1] 

机构地区：[1]山东师范大学物理与电子科学学院半导体研究所,济南250014

出　　处：《物理化学学报》2006年第6期657-660,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金重大项目(90201025;90301002)资助

摘　　要：报道了一种新颖而有效的二步制备氮化镓粉末的方法.以乙氧基镓Ga(OC2H5)3作前驱体,利用溶胶-凝胶法和高温氨化法相结合,在950℃氨化温度下,将凝胶与流动的NH3反应20min,合成了GaN粉末.XRD、FTIR、TEM及SAED的测量结果表明,GaN粉末是六方纤锌矿结构的单晶晶粒,粉末粒度较均匀,FTIR吸收谱有明显的宽化现象.A novel and efficient method was applied to prepare gallium nitride（GaN） powder. Hexagonal gallium nitride（GaN） powder was successfully synthesized by means of a combination of sol-gel process with high temperature ammoniation using Ga（OC2H5）3 as a precursor. Ammoniation of Ga2O3 gel was conducted in the flow of NH3 gas at 950 ℃ for 20 min. Measurement results by XRD, FTIR, TEM, and SAED indicate that the synthesised GaN is of a singlephase hexagonal wurtzite structure, and the granularity of the GaN powder has a good uniformity. In addtion, the FTIR shows a distinct peak broadening.

关 键 词：溶胶-凝胶法 氨化温度 GaN粉末 

分 类 号：TN304[电子电信—物理电子学]