磁场增强的La_(2/3)Sr_(1/3)MnO_3有机半导体界面载流子注入  

Magnetic-field-dependent carrier injection at La_(2/3)Sr_(1/3)MnO_3 and organic semiconductors interfaces

作　　者：吴镝[1] 熊祖洪[1] 李晓光[2] Z.V.Vardeny 施靖[1] 

机构地区：[1]美国犹他大学物理系,盐湖城犹他84112 [2]中国科学技术大学材料科学与工程系合肥微尺度物质科学国家实验室,合肥230026

出　　处：《物理》2006年第6期456-460,共5页Physics

摘　　要：文章作者制备了以多种π-共轭有机半导体(orgnanic semincondutor,简称OSEC)为中间层,La2/3Sr1/3MnO3(LSMO)和另一铁磁或非磁性金属为电极的有机二极管,测量了器件的磁致电阻和磁电致发光效应.器件显示了与LSMO电极类似的负磁电阻效应,但是它的电阻变化比LSMO电极本身的变化大3个数量级,而且器件还有正的磁电致发光效应.文章作者认为,这些磁场效应源于磁场作用下LSMO费米能级的异常移动,导致载流子在LSMO-OSEC界面注入的增强.We have fabricated organic diodes utilizing several p-conjugated organic semiconductors （OSEC） as spacer layers between La2/3Sr1/3MnO3 （LSMO） and various metallic electrodes, and measured their magnetoresistance （MR） and magnetoelectroluminescence （MEL） responses. The devices exhibit large negative highfield MR responses that resemble the MR response of the LSMO electrode, but amplified by - 3 orders in the resistance, and accompanied by a positive high-field MEL effect. We believe these magnetic-field effects result from enhanced carrier injection at the LSMO-OSEC interface that is attributed to the anomalous field-dependent Fermi level shift in LSMO.

关 键 词：有机二极管 磁场效应 LSMO 磁阻 

分 类 号：O473[理学—半导体物理]