氮化铝纳米线的合成与表征  

Growth and characterization of AlN nanowires

作　　者：李志杰[1] 张学星[1] 

机构地区：[1]沈阳工业大学理学院,沈阳110023

出　　处：《沈阳工业大学学报》2006年第3期353-356,共4页Journal of Shenyang University of Technology

基　　金：国家重点基础研究发展规划资助项目(G1999064908)

摘　　要：在氮气和氨气气氛（PN2：PNH3=1：1，总压强为8×10^4Pa,电压为20～28V。电流为60～62A的条件下，采用直流电弧等离子体法成功地制备出直径为20～200nm、长度达到20μm的AlN纳米线．利用x-射线衍射仪、扫描电镜、高分辨透射电镜和x-射线能谱仪等仪器对AlN纳米线形貌及结构进行观测与分析．AlN纳米线为六方晶态。属钎锌矿结构。并对AlN纳米线生长机理进行了研究．In the atmosphere of nitrogen and ammonia with the pressure proportion of 1 ： 1, pressure to 8 ×10^4 Pa, electric voltage of 20-28 V and electric current of 60-62 A, hexagonal AlN （h-AlN） nanowires with the diameters of 20 to 110 nm and lengths up to 20μm were successfully synthesized by dc arcdischarge. Composition, morphologies, microstructures were investigated by X-ray diffraction（XRD）, scan electron microscopy（SEM）, high resolving transmission electron microscopy （HRTEM）, energy dispersive X-ray analysis and so on. The result confirms that the individual nanowire has the nature of single crystal and wurtzite structure. The growth mechanism of AlN nanowires was also studied.

关 键 词：直流电弧 氮化铝 纳米线 扫描电镜 透射电镜 

分 类 号：TB383[一般工业技术—材料科学与工程]