ZnO／SiC／Si异质结构的特性  

The properties of ZnO/SiC/Si heterostructure

作　　者：段理[1] 林碧霞[1] 姚然[1] 傅竹西[1] 

机构地区：[1]中国科学技术大学物理系,合肥230026

出　　处：《材料研究学报》2006年第3期259-261,共3页Chinese Journal of Materials Research

基　　金：国家自然科学基金重点课题90201038;50472009;10474091科学院知识创新方向性课题KJ-CX2-SW-04-02资助项目.

摘　　要：用MOCVD方法在P型单晶Si(100)基片上外延SiC层,再用直流溅射在SiC层上生长ZnO薄膜,制备出 ZnO／SiC／Si异质结构,用XRD和AFM分析了ZnO／SiC／Si和ZnO／Si异质结构中表层ZnO的结构和形貌的差别,研究了这种异质结构的特性．结果表明,在Si(100)基片上外延生长出的是高取向、高结晶质量的SiC(100)层．这个SiC层缓冲层使在Si基片上外延生长出了高质量ZnO薄膜,因为ZnO与SiC的晶格失配比ZnO与Si的晶格失配更低．ZnO film was growed on Si substrate with a SiC buffer layer between them. The SiC layer was deposited on Si（100） substrate using MOCVD, and the ZnO film was deposited on the SiC buffer layer using direct current （DC） reactive sputtering. X-ray diffraction （XRD） and atomic force microscopy （AFM） were applied to measure the ZnO/SiC/Si sample and normal ZnO/Si sample. It shows that the ZnO film on SiC layer has higher crystal quality than that on Si substrate directly because the mismatch between ZnO and SiC is less than that between ZnO and Si. It reveals that using SiC buffer layer is an effectual method to grow high quality ZnO films on Si substrates.

关 键 词：无机非金属材料 ZnO薄膜 SiC缓冲层 异质外延 结构特性 

分 类 号：O782[理学—晶体学]