APCVD法制备掺氮二氧化钛薄膜及其性能研究  

Preparation and properties of N-doped TiO_2 films by APCVD

作　　者：王薇薇[1] 郭玉[1] 张溪文[1] 韩高荣[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《功能材料与器件学报》2006年第3期187-191,共5页Journal of Functional Materials and Devices

基　　金：国家高技术研究发展计划(No.2001AA320202)(863计划);国家自然基金(No.50372060)项目资助

摘　　要：采用常压化学气相沉积(APCVD)法,以四氯化钛(TiC l4)、氧气(O2)氨气(NH3)作为先驱体,成功制备了掺氮二氧化钛(TiO2)薄膜。通过对其进行扫描电镜(SEM)、X射线衍射(XRD)、紫外可见透过光谱(UV-VIS)研究后发现,氮掺杂后在二氧化钛薄膜中引入Ti4O7相,抑制了锐钛矿相向金红石相的转变,光吸收限发生红移,相应从365.8nm红移到了402.6nm,提高了薄膜在可见光照射下的光催化效率,并改善了薄膜表面的亲水性能。Using TICl4, O2 and NH3 as the precursors, N - doped titanium dioxide films were prepared by APCVD. According to the results from SEM, X - ray diffraction （XRD） and the UV - VIS absorption spectrum, it is found that a new phase of Ti4O7 is formed in the thin film after nitrogen doping and the crystal transformation from anatase to rutiie is inhibited. As well, a red drift of the absorption edge from 365.8nm to 402.6nm exists in the N - doped TiO2 films and the visible - light induced photoeatalysis and hydrophilicity are both enhanced.

关 键 词：光催化性 亲水性 掺氮二氧化钛薄膜 常压化学气相沉积 

分 类 号：O484.4[理学—固体物理]