PTCDA/P-Si表面随温度变化的AFM研究  

AFM analysis for the temperature-dependent surface morphology of PTCDA/P-Si heterjunction

作　　者：张福甲[1] 冯煜东[1] 李东仓[1] 胥超[1] 

机构地区：[1]兰州大学物理科学与技术学院,兰州730000

出　　处：《功能材料与器件学报》2006年第3期225-228,共4页Journal of Functional Materials and Devices

基　　金：国家自然科学基金(No.60276026);甘肃省自然科学基金资助项目(No.3ZS041-A25-001)

摘　　要：利用AFM研究了在不同衬底温度及蒸发条件下制备的有机半导体材料PTCDA在P-Si(100)形成的薄膜讨论了其表面形貌及岛状晶核分布与生长温度之间的机理。The surfeace morphology of the thin films for organic semiconductor material PTCDA was investigated by AFM, which was prepared on the substrate P- Si （100） at different temperatures and under different vapor conditions. At the same time the mechanism between surface morphology island distribution and growth temperature was also analyzed.

关 键 词：PTCDA/P—Si AFM 表面形貌 岛密度 衬底温度 

分 类 号：TN383.1[电子电信—物理电子学]