266nm脉冲激光光解基质隔离的cis-(NO)_2  

266nm Pulsed Laser Photolysis of cis-(NO)_2 in Cryogenic Solid Matrix

作　　者：王雪峰[1] 余敏[1] 秦启宗[1] 

机构地区：[1]复旦大学激光化学研究所,上海200433

出　　处：《物理化学学报》1996年第8期673-676,共4页Acta Physico-Chimica Sinica

基　　金：国家自然科学基金

摘　　要：The photodissociation of cis-(NO)2 in N2 and Ar matrices under 266 nm pulsed laser irradiation is reported- Results show the electronically excited o(1D) atom may be formed in the primary photolysis step. In the N2 matrix, the highly active o(1D) atoms could either react with N2 lattice molecules forming N2O or recombine with nearby N2O forming cis-(NO)2 and trans-(NO)2. However, in the Ar matrix the nascent state o(1D) atom, due to the lack of reactant, quenches to O(3P) as moving through the lattice site and the yield of N2O is less than that in N2 matrix.The photodissociation of cis-(NO)2 in N2 and Ar matrices under 266 nm pulsed laser irradiation is reported- Results show the electronically excited o(1D) atom may be formed in the primary photolysis step. In the N2 matrix, the highly active o(1D) atoms could either react with N2 lattice molecules forming N2O or recombine with nearby N2O forming cis-(NO)2 and trans-(NO)2. However, in the Ar matrix the nascent state o(1D) atom, due to the lack of reactant, quenches to O(3P) as moving through the lattice site and the yield of N2O is less than that in N2 matrix.

关 键 词：基质隔离 激光光解 cis-(NO)2 脉冲 

分 类 号：O613.61[理学—无机化学] O644.18[理学—化学]