Spontaneous Hillock Growth on Indium Film Surface  

作　　者：魏合林 张西祥 黄汉臣 

机构地区：[1]Department of Physics, Huazhong University of Science and Technology, Wuhan 430074 [2]Department of Physics and Institute of Nano Science and Technology, Hong Kong University of Science and Technology, Hong Kong [3]Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180, USA

出　　处：《Chinese Physics Letters》2006年第7期1880-1883,共4页中国物理快报（英文版）

摘　　要：Uniformly distributed indium hillocks are grown on silicon substrates by dc magnetron sputtering. The morphologies and the microstructures have been investigated by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and x-ray diffraction （XRD）. From the TEM and SEM images, we find that, at the earlier stage, the grain coalescent process dominates. This coalescent process induces a larger compressive stress. We believe that the drive force for hillock growth comes from this compressive stress. Under this compressive stress, the grain locating in the middle of several grains are extruded from these grains, and then a hillock forms with the increasing deposition time. For low melting point and high diffusion coefficient metal, such as bismuth and indium, this spontaneous-hillock growth mechanism can be used to fabricate well aligned nanostructures.Uniformly distributed indium hillocks are grown on silicon substrates by dc magnetron sputtering. The morphologies and the microstructures have been investigated by scanning electron microscopy （SEM）, transmission electron microscopy （TEM） and x-ray diffraction （XRD）. From the TEM and SEM images, we find that, at the earlier stage, the grain coalescent process dominates. This coalescent process induces a larger compressive stress. We believe that the drive force for hillock growth comes from this compressive stress. Under this compressive stress, the grain locating in the middle of several grains are extruded from these grains, and then a hillock forms with the increasing deposition time. For low melting point and high diffusion coefficient metal, such as bismuth and indium, this spontaneous-hillock growth mechanism can be used to fabricate well aligned nanostructures.

关 键 词：THIN-FILMS GRAIN-GROWTH NANOSTRUCTURES 

分 类 号：O484[理学—固体物理]