GRAIN-GROWTH

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相关期刊：《Chinese Physics Letters》更多>>
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Ferroelectric Properties of Polycrystalline Ceramics with Dipolar Defect Simulated from the Potts-Ising Model
《Chinese Physics Letters》2008年第4期1442-1445,共4页张艳飞 王春雷 赵明磊 李吉超 张睿智 刘剑 梅良模 
Supported by the National Natural Science Foundation of China under Grant No 10474057.
Physical properties of polycrystailine ferroelectrics including the contributions of the fixed dipolar defects and the average grain size in the Potts-Ising model are simulated by using the Monte Carlo method. Domain ...
关键词：MONTE-CARLO-SIMULATION THIN-FILMS GRAIN-GROWTH FATIGUE DYNAMICS FIELD DEPENDENCE METALS 
Spontaneous Hillock Growth on Indium Film Surface
《Chinese Physics Letters》2006年第7期1880-1883,共4页魏合林 张西祥 黄汉臣 
Uniformly distributed indium hillocks are grown on silicon substrates by dc magnetron sputtering. The morphologies and the microstructures have been investigated by scanning electron microscopy （SEM）, transmission e...
关键词：THIN-FILMS GRAIN-GROWTH NANOSTRUCTURES 
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