短漂移区肖特基-p-i-n混合整流二极管(MPS)的电学特性研究  

Study of the electrical characteristics of merged p-i-n/Schottky (MPS) diode with short drift region

作　　者：韩颖晖[1] 汪再兴[1] 闫锐[1] 杨建红[1] 

机构地区：[1]兰州大学物理科学与技术学院,甘肃兰州730000

出　　处：《兰州大学学报（自然科学版）》2006年第3期80-84,共5页Journal of Lanzhou University(Natural Sciences)

摘　　要：肖特基-p-i-n整流二极管(MPS)的作用机制比较复杂．采用数值模拟的方法研究MPS的工作机制,清晰地给出了肖特基势垒、p-n结势垒以及两种势垒共同作用下器件内部电势、载流子浓度分布和电压-电流特性．结果表明:在MPS阳极区(p+区)注入空穴的作用和肖特基势垒与p-n结势垒双重作用下,器件的电势将主要降低在肖特基结上;形成的电导调制区在饱和时变化很小,整个器件内电阻为准常数．The operation of merged p-i-n/Schottky （MPS） diode involves the interaction of Schottky and p-n junction barriers, which complicates the analytical description of the device. In this paper, the electrical characteristics of MPS are studied by means of numerical simulation. The potential and carrier profiles are presented as functions of applied bias, and the I-V characteristics are presented in terms of various current components （i.e, the Schottky region and the p-i-n region）. The results show that the conductivity-modulated region does not extend appreciably upon the current entering into the saturation regime and the overall resistance of the device can be regarded as a constant for the saturation regime.

关 键 词：MPS P-I-N 电导调制 肖特基势垒 

分 类 号：TN313[电子电信—物理电子学]