RF溅射ZnO薄膜工艺与结构研究  

Research of Deposition Condition and Structural Properties of ZnO Films Grown by RF Magnetron Sputtering

作　　者：陈祝[1] 张树人[2] 杨成韬[2] 陈富贵[2] 董加和[2] 王升[2] 

机构地区：[1]成都信息工程学院通信工程系,四川成都610225 [2]电子科技大学微电子与固体电子学院,四川成都610054

出　　处：《电子元件与材料》2006年第7期35-38,共4页Electronic Components And Materials

基　　金：国家973计划资助项目(No.5130Z02)

摘　　要：通过RF磁控溅射在Si（100）基片上制备了ZnO薄膜，并研究了磁控溅射中各生长参数，如衬底温度、氧分压及后处理工艺等因素对ZnO薄膜微结构、表面形貌与结晶取向的影响。结果表明：溅射温度和氧分压对薄膜的微结构与择优取向有很大的影响，并对不同的溅射工艺进行了分析比较，从而确定了最佳溅射及后处理条件：RF溅射温度小于300℃，功率为50W，沙（Ar：O2）为20：5，退火温度550～600℃，并获得了c轴择优取向的ZnO薄膜。The zinc oxide （ZnO） thin films were deposited on Si（100） substrate by RF magnetron sputtering technique. Discussed were the relationships of microstructure, surface morphology and preferred orientation of ZnO films with the deposition parameters, such as substrate temperature, oxygen partial pressure, and final annealing treatment, etc. It is found that the preferred orientation and microstructure of ZnO films are strongly affected by the deposition temperature and oxygen partial pressure. Therefore, the various deposition conditions are further investigated and compared in detail to obtain the optimum sputtering conditions： the sputtering temperature is lower than 300℃, and with 50W RF power, Ar：O2=20：5 （in volume） and 550～600℃ annealing temperature. Based on these conditions, an excellent ZnO films with high c-axis orientation are realized.

关 键 词：无机非金属材料 ZNO薄膜 RF磁控溅射 氧分压 择优取向 

分 类 号：O484.1[理学—固体物理]