SiGe HBT双端口网络参数模型和模拟  

SiGe HBTs' Two Port Network Parameter Model and Its Simulation

作　　者：史辰[1] 杨维明[1] 刘素娟[1] 陈建新[1] 

机构地区：[1]北京工业大学电子信息与挖制工程学院北京光电子技术实验室,北京100022

出　　处：《北京工业大学学报》2006年第6期506-509,513,共5页Journal of Beijing University of Technology

基　　金：国家自然科学基金资助项目(60476034);北京市自然科学基金资助项目(4032005).

摘　　要：针对等效电路模型中应用频率范围窄、精度低以及在高频器件分析过程中与网络分析法的兼容性差等问题,由交流I-V方程出发,推导得到使用散射参数描述的锗硅异质结双极晶体管(SiGe HBT)的双端口网络参数模型．着重分析了Si／SiGe异质结和基区结构对器件交流性能的作用,并尽量避免省略物理量和对频率上限的限制．与等效电路模型相比,模型的频域精度由半定量提高至优于5％,并将适用频率由特定范围扩展至只计入本征参数时的特征频率fT,涵盖全部SiGe HBT的小信号工作频段,为器件的设计、优化和应用提供了一种宽频带和高精度的定量模拟方法．Aiming at the improvement of typical equivalent-circuit model＇s performance on precision, service band and compatibility with network analysis method, from ac I-V equations, this paper calculated SiGe HBTs＇ two port network parameter model described by scattering parameters. In the calculation, the influence on HBTs＇ ac characteristics by Si/SiGe heterojunction and base structure were emphatically analyzed, and the reject of physical quantities and the limit to frequency were avoided as much as possible to improve the model＇s accuracy and frequency range, which provided a wideband, high-precision quantitative approach for the work of the device design, optimization and applications.

关 键 词：锗硅 异质结 双端口网络 

分 类 号：TN323.2[电子电信—物理电子学]