TiO_2薄膜发展现状及APCVD制备掺氮TiO_2性能研究  

The Development of TiO_2 Films and the Properties of N-doped TiO_2 Films Prepared by APCVD

作　　者：王薇薇[1] 郭玉[1] 张溪文[1] 韩高荣[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《材料导报》2006年第F05期57-61,74,共6页Materials Reports

基　　金：国家高技术研究发展计划(2001AA320202)(863计划);国家自然基金(50372060)项目资助

摘　　要：概述了TiO2的国内外发展现状,从原理、改性等方面详细介绍了TiO2的光催化特性,并对TiO2的制备方法进行了总结概括。用APCVD法所做的气体流量系列掺氮TiO2样品进行测试分析发现,氮已经掺入TiO2中,氮的掺杂改善了薄膜表面的亲水性能。It summarizes the development of TiO2 all over the world, and introduces the photocatalysis of TiO2 in terms of the theory and character factors, and generalizes the preparation methods of TiO2. The samples of Ndoped TiO2 films prepared by atmosphere pressure chemical vapor deposition are tested and analyzed, and we find that N element exists in the TiO2 films and the hydrophilieity in the surface is improved after N is doped in the films.

关 键 词：光催化性 掺氮TiO2薄膜 APCVD 

分 类 号：TN304.24[电子电信—物理电子学] O484[理学—固体物理]