一维碳化硅纳米材料的研究进展  

Progress in Research on One-dimensional SiC Nanomaterials

作　　者：张爱霞[1] 蔡克峰[1] 

机构地区：[1]同济大学功能材料研究所,上海200092

出　　处：《材料导报》2006年第F05期106-108,共3页Materials Reports

基　　金：国家自然科学基金(50371062);教育部优秀青年教师资助计划

摘　　要：介绍了具有一维纳米结构的碳化硅(SiC)如SiC纳米棒、纳米线、纳米管、纳米带的制备方法,着重介绍了碳纳米管模板生长法、碳还原法、激光烧蚀法、电弧放电法、流动催化剂法和热解有机前驱体法以及它们的生长机理,并对这几种方法的优缺点进行了分析,指出了目前研究一维纳米SiC中存在的问题和未来发展方向。In this paper, the preparation methods for one-dimensional SiC nanostructures such as nanorods, nanowires, nanotubes and nanobelts are reviewed, emphasizing on the carbon nanotubes template-assisted growth （or the carbon nanotubes-confined reaction method）, the reduction method, the laser ablation synthesis, the arc-discharge approach, the floating catalyst method and pyrolysis of organic precursor. Their advantages and disadvantages are analyzed. The current problems and the development trend of the research on one-dimensional SiC nanomaterials are also pointed out.

关 键 词：一维纳米结构 碳化硅 制备 生长机理 

分 类 号：TB383[一般工业技术—材料科学与工程] TQ174.758[化学工程—陶瓷工业]