电子封装用高硅铝合金热膨胀性能的研究  

Study on Thermal Expansion Property of High-silicon Aluminum Alloy for Electronic Packaging

作　　者：张伟[1] 杨伏良[1] 甘卫平[1] 刘泓[1] 

机构地区：[1]中南大学材料科学与工程学院,长沙410083

出　　处：《材料导报》2006年第F05期348-350,共3页Materials Reports

基　　金：国防科学技术工业委员会资助项目(MKPT-03-151)

摘　　要：采用雾化喷粉与真空包套热挤压工艺制备了高硅铝合金电子封装材料，测定了合金在100-400℃间的热膨胀系数值，并运用理论模型对该温度区间的热膨胀系数进行了计算，分析了高硅铝合金材料热膨胀性能的影响因素。结果表明：Si相作为增强体能显著改善Al—Si合金的微观组织与热膨胀性能，430℃热挤压下的高硅铝合金材料在100-400℃之间的热膨胀系数平均值与Turner模型很接近。High-silicon aluminum electronic packaging material is fabricated with the method in which the air- atomization is followed by a vacuum canning hot-extrusion process. The coefficients of thermal expansion（CTE） of the alloy are measured at temperature range of 100℃ to 400℃. Theoretical models are employed to calcucate CTE of the alloy in the same temperature range. The influence factorson thermal expansion property are analyzed. The results show that microstructure and thermal expansion property of Al -Si alloys are improved by silicon phrase , and the theoretically calculated CTEs are very close to the experimental mean values of high-silicon aluminum alloy extruded at 430℃ extrusion temperature at temperature range of 100℃ to 400℃.

关 键 词：电子封装 高硅铝合金 热膨胀系数 理论模型 

分 类 号：TB333[一般工业技术—材料科学与工程] TG146.21[金属学及工艺—金属材料]