Pb用量对锆钛酸铅薄膜微观结构和铁电性能的影响  

EFFECT OF Pb CONTENT ON MICROSTRUCTURE AND FERROELECTRIC PROPERTY OF PZT THIN FILM

作　　者：赵素玲[1] 官建国[1] 张联盟[1] 王龙海[2] 

机构地区：[1]武汉理工大学材料复合新技术国家重点实验室 [2]华中科技大学电子科学与技术系,武汉430074

出　　处：《硅酸盐学报》2006年第6期703-707,共5页Journal of The Chinese Ceramic Society

基　　金：教育部优秀青年教师资助计划项目[2002(350)]硅酸盐材料工程教育部重点实验室开放基金(SYSJJ2005-07)资助项目

摘　　要：在Pt／Ti／SiO2/Si基片上,通过多次匀胶旋涂-预热处理工艺制备了PbTiO3(PT)无机薄层夹心的锆钛酸铅(lead zirconate titanate,PZT)薄膜,然后经650℃退火处理得到了所需的具有钙钛矿结构的PZT铁电薄膜。用X射线衍射、原子力显微镜表征了PZT铁电薄膜微观结构,并测试铁电性能。结果表明:制备PT层时的Pb用量对得到的PZT铁电薄膜的微观结构和铁电性能有重要影响。当Pb过量15%(摩尔分数)左右时,得到的PZT铁电薄膜不仅晶界清晰,晶粒尺寸分布均匀,具有纯钙钛矿结构,而且铁电性能优异,剩余极化强度P=21μC/cm2,矫顽场Ec=37kV/cm。Lead zirconate titanate （PZT） thin film with a single perovskite structure and good ferroelectric properties was deposited on Pt/Ti/SiO2/Si substrates using a one-time annealing process at 650 ℃. The inorganic PZT film was sandwiched by an inorganic PbTiO3 （PT） thin film, which was prepared by the repeated spin coating-heating pretreatment technique. The microstructure and ferroelectric properties of the PZT thin film were studied with X-ray diffraction, atom force microscope and ferroelectric test. The results show that the Pb content used in the PT precursor sol had a strong influence on the microstructure and ferroelectric properties of the obtained PZT thin film.When the [Pb]/[Ti] molar ratio is 1.15, the PZT thin film had an even grain size, clear boundary and a single perovskite structure. It also exhibits good ferroelectric properties, maintaining polarization of Pr =21μ C/cm^2 and the coercive field Ec = 37 kV/cm.

关 键 词：锆钛酸铅薄膜 铁电薄膜 微观结构 铁电性能 

分 类 号：TB321[一般工业技术—材料科学与工程]