纳米CeO_2的醇水法制备及其对GaAs晶片的抛光性能  

Synthesis of nano-sized CeO_2 via alcohol-water method and its polishing performance on GaAs wafer

作　　者：陈志刚[1] 李霞章[2] 陈杨[1] 陈建清[3] 倪超英[4] 

机构地区：[1]江苏工业学院材料科学与工程系,常州213016 [2]江苏大学材料科学与工程学院,镇江212013 [3]河海大学材料科学与工程系,南京210098 [4]特拉华大学材料科学与工程系

出　　处：《中国有色金属学报》2006年第6期1064-1069,共6页The Chinese Journal of Nonferrous Metals

基　　金：江苏省自然科学基金资助项目(BK2002010);江苏省高技术资助项目(BG2004022)

摘　　要：在醇水体系中以HMT为缓释沉淀剂制备了纳米CeO2粉体,并用TEM、SAD、XRD对其进行了表征,将制备的不同粒径纳米CeO2粉体配制成抛光液,对GaAs晶片进行了化学机械抛光。研究了醇的引入及煅烧温度对粉体性能的影响,并就纳米CeO2磨料尺寸对GaAs晶片抛光后表面粗糙度的影响机理进行了探讨。结果表明:醇水体系中制备的纳米CeO2颗粒较水溶液中制备的颗粒粒径小,且分散性好;随着煅烧温度的升高,颗粒逐渐增大,不同尺寸的纳米颗粒具有不同的抛光效果;随着磨料粒径的增大,表面粗糙度值也随之升高。Nano-sized CeO2 powders were synthesized by homogeneous precipitation method in alcohol-water solution with HMT as precipitator, the powders were characterized by TEM, SAD and XRD. The prepared powders were collocated into polishing slurry for chemical mechanical polishing of GaAs wafer. The effects of alcohol nature and calcine temperature on the resultant CeO2 nanoparticles were investigated, and the influence mechanism of nanoCeO2 size on the roughness of GaAs wafer was also discussed. The results show that the particles prepared by the above method are of smaller size and better dispersion than those obtained from the ordinary powders synthesized in water solution. The particle size become larger with the increase of calcination temperature. Various size of particles have the different polishing effect, of which the surface roughness rises with the increase of particle size.

关 键 词：纳米CEO2 GAAS 醇水法 抛光 

分 类 号：TG146[一般工业技术—材料科学与工程] TG356.28[金属学及工艺—金属材料]