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作 者:冯宗财[1] 赵凌[2] 王跃川[2] 杜春雷[3]
机构地区:[1]湛江师范学院化学系 [2]四川大学高分子材料工程国家重点实验室,成都610065 [3]中国科学院光电技术研究所微细加工光学技术国家重点实验室
出 处:《应用化学》2006年第7期762-765,共4页Chinese Journal of Applied Chemistry
基 金:教育部骨干教师计划资助;教育部博士点基金资助项目
摘 要:由链末端含有—COOH、—OH和丙烯酰氧基的超支化聚合物、多官能丙烯酸酯和光引发剂三组分组成光致抗蚀剂。在玻璃片上成膜后硬度可达到HB^H的铅笔硬度。抗蚀剂膜用混合UV光源曝光和四甲基氢氧化铵(TMAH)水溶液显影可获得E0约为5.5×10-3J/cm2的灵敏度和γ约为8的高反差。其曝光的灵敏度和反差γ可由显影液和光引发剂调节。并且显示出刻蚀深度随曝光能量呈现线性变化的关系。此特性使得该类抗蚀剂可用于微光学元件加工,并可对其表面形状进行控制。使用该类抗蚀剂,通过移动掩膜曝光制备了200μm×200μm的微透镜阵列。Three-component photoresists were prepared from hyperbranched polyester, muhifunctional acrylate monomer and photoinitiator. The hyperbranched resin had -COOH, -OH and methacryloxy groups at their chain ends. The dried resist on glass substrate showed an H - HB pencil hardness. A high sensitivity with E0 - 5.5 × 10^-3 J/cm^2 and a high contrast with γ~8 were obtained for the resist exposed with a mixed UV light and developed with TMAH aqueous solution. Sensitivity and contrast upon UV exposure were tunable by development solution and the amount of photoinitiator. The resist exhibited a unique linear relationship between exposure energy and etching depth. This property provides a controlling of surface profile of micro optical elements fabricated with photoresists. Microlens arrays(200 μm × 200 μm) were prepared from these photoresists with a moving-mask.
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