N型多孔单晶硅片的热电性能研究  

Thermoelectric properties of N type Porous Silicon Wafer

作　　者：赵志远[1] 徐桂英[1] 孟疌[1] 

机构地区：[1]北京科技大学特种陶瓷粉末冶金研究中心,北京100083

出　　处：《中国材料科技与设备》2006年第4期29-31,共3页Chinese Materials Science Technology & Equipment

基　　金：国家自然科学基金资助项目（60176004）;国家863计划资助项目（2002AA302406）

摘　　要：半导体硅热电材料原材料极为丰富，而且安全无毒。尽管硅材料有着比较大的塞贝克系数，但是由于硅的热导率太高而电导率偏低导致热电性能低而不适用于热电材料。为了解决这一问题，本文采用电化学腐蚀的方法制备了N型多孔硅。采用物理气相沉积和电化学腐蚀相结合的方法在硅片上的纳米孔中镶嵌InSb，实现实空结合量子结构。这一结构大大提高了N型硅材料的热电优值，为研制具有高热电转化效率的热电材料开辟了一个新的途径。As a semiconductor silicon material is very abundant in the earth, safe and nonpoisonous. Although silicon material has high Seebeck coefiqcient, it is not suitable for the application as thermoelectric materials because of its high thermal conductivity and low thermoelectric properties. In order to dissolve this problem electrochemical corrosion method was adopted to fabricate porous 1 silicon. Physical vapor deposition combining electrochemical corrosion method was adopted to studded InSb in the holes of porous silicon and Combined Dense Quantum and Hollow Quantum Structure was realized. This structure improves the thermoelectric properties of N type silicon wafer greatly, and introduce a new way to invent high conversion effciency thermoelectric materials.

关 键 词：热电效应 电化学腐蚀 空实心结合量子结构 N型硅片 热电优值 

分 类 号：O472[理学—半导体物理]