GaAs/AlGaAs超晶格的光致发光  被引量:1

The Photoluminescence of GaAs/AlGaAs Superlattice

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作  者:贺利军[1] 程兴奎[2] 张健[1] 李华[1] 

机构地区:[1]山东大学物理与微电子学院,山东济南250100 [2]山东大学光电材料与器件研究所,山东济南250100

出  处:《量子光学学报》2006年第3期184-186,共3页Journal of Quantum Optics

基  金:国家自然科学基金(69976016)

摘  要:在室温下测量了GaAs/A l0.3Ga0.7As超晶格的光致发光,发现在波长λ=761 nm处存在一较强的发光光峰,此发光峰目前尚未见报道。经理论分析表明,此峰是量子阱中的第一激发态电子与受主空穴复合发光。实验还观测到在λ=786 nm处,λ=798 nm处和λ=824 nm处分别存在一发光峰,分析表明λ=786 nm处的发光峰为量子阱阱中费米能级附近的电子与轻空穴复合发光;λ=798 nm处的发光峰为量子阱内的基态电子到轻空穴的复合发光;λ=824 nm处的发光峰为阱中激子复合复合发光。理论计算与实验结果符合的很好。The photoluminescence of GaAs/AlGaAs superlattice at T = 300 K is measured. A comparatively stronger"peak at A = 761 nm on the photoluminescence spectrum is found. As far as the current reseach goes, the author haven't found any literature having reported the discovery of this peak. The peak can be attributed to the recombination of electrons on the frist excited state in quantum well and holes on acceptor level. This paper also finds the existence of one peak at A = 786 nm, A = 798 nm and A = 824 nm respectively. They are respectively attributed to the recombination of electrons near Fermi level in the well and light holes in valence band, the recombination of electrons on ground state in quantum well and light holes in valence band, and the recombination of electrons on donor impurity and heavy holes in valence band. The calculated positions of photoluminescence peaks are in agreement with the experimental results.

关 键 词:GAAS/ALGAAS 超晶格 光致发光 

分 类 号:O431[机械工程—光学工程]

 

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