p-Si TFT的电场增强MILC制备技术  

Preparation of poly-Si thin films and TFTs by electric-field enhanced metal-induced lateral crystallization

作　　者：曾祥斌[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《华中科技大学学报（自然科学版）》2006年第7期85-87,共3页Journal of Huazhong University of Science and Technology(Natural Science Edition)

摘　　要：采用电场增强金属诱导侧向晶化方法获得了结晶良好的多晶硅薄膜,并采用该工艺制备了p沟道薄膜晶体管器件,其迁移率为65cm2/(V·s),开关态电流比为5×106.采用拉曼光谱分析、X射线衍射、扫描电镜等微观分析手段对多晶硅薄膜进行了分析,结果表明加电场于两电极之间有促进多晶硅薄膜晶化的作用.采用EFE-MILC技术获得了大的晶粒尺寸,并用此技术制备了p沟多晶硅TFT.表明EFE-MILC技术是在低温下获得大晶粒尺寸p-Si薄膜和高性能p-SiTFT的好方法.Poly-Si thin film and poly-Si TFTs were obtained and thin film transistors, with a mobility of 65 cm^2/（V·s） and a current ratio of 5 × 10^6 at on and off states, were prepared by electric-field en- hanced metal-induced lateral crystallization （EFE-MILC）. Raman and X-ray diffraction spectra analy- sis were carried out of poly-Si thin films. The results show that application of DC electric field to thin film during annealing effected enhancing crystallization. The large-size grain was obtained by EFE-MILC. The p-channel poly-Si TFTs were fabricated by this large-size grain technique. It shows that EFE-MILC is a promising method to obtain high performance poly-Si thin films with large-size grain and high-performance poly-Si TFTs at low temperature.

关 键 词：金属诱导侧向晶化 电场增强晶化 多晶硅薄膜 薄膜晶体管 

分 类 号：TN321.5[电子电信—物理电子学]