退火温度和ZnO缓冲层对氨化Ga_2O_3/ZnO薄膜合成GaN纳米结构的影响  

Influence of ZnO Buffer Layer and Ammoniate Temperature to GaN Film Nano-structure by Ammoniating Ga_2O_3/ZnO Film on Silicon Substrate

作　　者：王书运[1] 庄惠照[1] 高海永[1] 

机构地区：[1]山东师范大学物理与电子科学学院,山东济南250014

出　　处：《材料科学与工程学报》2006年第4期568-570,591,共4页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(90301002)

摘　　要：利用射频磁控溅射法在Si(111)衬底上先溅射ZnO缓冲层,再溅射Ga2O3薄膜,然后在开管炉中不同温度下通氨气进行氨化反应生长GaN薄膜。分析结果表明,利用该方法制备的GaN薄膜是六角纤锌矿多晶结构,并且随着氨化温度的升高,GaN薄膜向棒状和线状形态转变。同时分析了ZnO缓冲层对形成GaN纳米结构的影响。In this study, ZnO buffer layer was sputtered on Si（ 111 ） substrate by radio frequency sputtering system before Ga2O3 film was sputtered. Ga2O3/ZnO film was ammoniated at 850 ℃,900 ℃,950 ℃ and 1000 ℃ in tube furnace under flowing NH3 ambience to fabricate GaN film. The result of X-ray diffraction measurement revealed that the as-prepared GaN film was hexagonal wurtzite structure. The morphology and structure of the GaN film were studied by Scanning Electron Microscopy and Transmission Electron Microscope. The result reveals that GaN film changed to stick and wire shape with the temperature up to 950℃ and 1000℃. Meanwhile, the influence of ZnO buffer layer thickness to GaN film nano-structure was analyzed.

关 键 词：射频磁控溅射 GAN薄膜 ZnO缓冲层 氨化反应 

分 类 号：TN304.23[电子电信—物理电子学]