CMOS器件预辐照筛选可行性及方法研究  

Investigation of the feasibility and methods of the CMOS devices' pre-irradiation screening

作　　者：李爱武[1] 余学峰[1] 任迪远[1] 汪东[1] 匡治兵[1] 牛振红[1] 

机构地区：[1]中国科学院新疆理化技术研究所

出　　处：《核电子学与探测技术》2006年第4期470-473,495,共5页Nuclear Electronics & Detection Technology

摘　　要：预辐照筛选成功的关键取决于预辐照后器件损伤的可恢复性及再次辐照时器件损伤的可重复性。通过对CMOS器件进行大量不同条件下的60Coγ总剂量辐照实验和退火实验,探讨了能使器件预辐照后的损伤得到尽可能大地恢复的辐照、特别是退火条件,并通过反复达4次的CC4007器件“辐照-退火-辐照”试验,研究了CMOS器件退火后再次辐照时电参数变化的可重复性。The successful pre-irradiation screening must be vitally based on the reversibility of the devices damage after pre-irradiation and repeatability of the devices＇ damage by reirradiation. A large number of experiments about 60^Coγ total irradiation and anneal have been done to the CMOS devices with different conditions. The irradiation dose, especially the anneal conditions under which the irradiation damage of the devices＇ after pre-irradiation can be eliminated as soon as possible have been discussed, furthermore, the repeatability of the electric parameter changes of the CMOS devices reirradiated after being annealed has been effectively studied by four turns of irradiation and anneal experiments for CCA007 devices.

关 键 词：CMOS 预辐照 筛选 退火 

分 类 号：TN432[电子电信—微电子学与固体电子学]