钼掺杂降低TiO_2氧敏薄膜最佳工作温度研究  

Research on reducing best operating temperature of TiO_2 thin films through doping Mo

作　　者：程东升[1] 孙以材[1] 潘国锋[1] 袁育杰[1] 

机构地区：[1]河北工业大学信息工程学院,天津300130

出　　处：《传感器与微系统》2006年第7期15-17,共3页Transducer and Microsystem Technologies

摘　　要：用直流反应磁控溅射法在陶瓷基片上制备出TiO2薄膜。并进行1 100℃,2 h的退火处理。配置钼酸铵溶液,利用浸渍法处理TiO2薄膜若干时间。取出后,进行500℃,3 h退火处理。用气敏测试箱对制备出的TiO2薄膜的氧敏特性进行试验测试,发现对氧气有很好的敏感特性,比未经此项工艺处理的TiO2薄膜的最佳工作温度降低100℃,为300℃左右,并进行SEM测试,分析其表面结构,研究气敏机理。TiO2 thin films are preparated on alumina substrates by the method of DC reactive magnetron sputtering. Annealing is carried out at 1 100℃ for 2 h. Put them into the ammonium molybdate solution and then annealed at 500℃ for 3 h. The thin films have better oxygn-sensing properties. The best operating temperature droped 100℃ than undoped TiO2 thin films, it＇s about 300℃. The SEM testing is carried out, the surface structure of the thin films is analysed ,and the mechanism of the thin films oxygen-sensing properties is investigated.

关 键 词：TIO2薄膜 钼酸铵 最佳工作温度 氧敏特性 

分 类 号：TP212[自动化与计算机技术—检测技术与自动化装置]