金属诱导生长与超高真空化学气相沉积方法相结合制备多晶锗硅薄膜  

Poly-SiGe films prepared by metal-induced growth using UHVCVD system

作　　者：吴贵斌[1] 叶志镇[1] 赵星[1] 刘国军[1] 赵炳辉[1] 

机构地区：[1]浙江大学硅材料国家重点实验室,杭州310027

出　　处：《物理学报》2006年第7期3756-3759,共4页Acta Physica Sinica

基　　金：国家科技部攀登项目(批准号:981101040);浙江计划项目(批准号:991110535)资助的课题.~~

摘　　要：采用金属Ni诱导与超高真空化学气相沉积(UHVCVD)相结合的方法,在热氧化硅衬底上生长了多晶锗硅薄膜.利用X射线衍射(XRD)、场发射扫描电镜(SEM)等对多晶锗硅薄膜的质量、表面形貌进行了测试分析,并就生长参数以及金属Ni对薄膜性能的影响进行了研究.结果表明1)在420—500℃范围内,金属Ni具有明显的诱导作用;2)Ni层厚度对薄膜质量及形貌的影响使得晶粒尺寸随Ni厚度增加存在一极大值.在Ni层厚度为60nm时,能够获得晶粒尺寸均匀,晶粒大小为500—600nm,结晶质量良好的多晶锗硅薄膜.Poly-SiGe films were prepared by a metal-induced growth technique with ultrahigh vacuum chemical vapor deposition （UI-IVCVD） at low temperature. The crystal quality and morphology of poly-SiGe films were characterized by XRD and SEM. The influences of varying the thickness of Ni prelayer and the growth parameters on poly-SiGe films were investigated. It is shown that thicker Ni（ ≥ 10nm） has an obvious effect on poly-SiGe growth at 420-500℃. And for the samples with 60nm thick Ni layers, poly-SiGe deposition yields a continuous, highly crystalline film with good morphology.

关 键 词：超高真空化学气相沉积 金属诱导 镍 多晶锗硅 

分 类 号：O484.1[理学—固体物理]