GaAs FET/pHEMT器件小信号模型电路的确定  

Determining the small-signal model circuit for GaAs FET/pHEMT

作　　者：刘章文[1] 蒋毅[1] 古天祥[1] 

机构地区：[1]电子科技大学自动化工程学院

出　　处：《仪器仪表学报》2006年第7期787-790,共4页Chinese Journal of Scientific Instrument

基　　金：中国工程物理研究院科学技术研究基金(20040433)资助项目

摘　　要：提出了一种精确、高效的FET/pHEMT器件模型参数提取的改进方法。首先利用FET器件漏端零偏置的简化模型,测出寄生元件值,再利用正常配置时FET/pHEMT器件网络S参数,使用“剥离”技术将寄生部分全部剔除。最后利用网络导纳参数的表达式,确定了本征电路元件参数。采用了该方法的提取过程物理意义清晰,优化处理容易。对NEC器件的测试结果显示,该改进方法效率高,测试精度小于3%。An accurate, effective improved method for extracting the model parameters of FET/pHEMT device is proposed. First, the values of parasitic elements were measured using the simple model within which the FET was zero drain biased. Then, making use of the FET/pHEMT S-parameters measured in its normal bias condition, the parasitic contributions were removed by skillfully using the de-embedding technique. Finally, the intrinsic circuit element parameters were determined using the admittance parameter expressions. The physical meaning for the method is very clear, and the result optimization is easy. The experiment on a NEC device shows that the improved method is efficient. The test error is less than 3%.

关 键 词：FETS 小信号模型 参数提取 剥离 

分 类 号：TN606[电子电信—电路与系统] TN386