FETS

作品数：56被引量：47H指数：4
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相关领域：电子电信更多>>
相关作者：顾宁王伟刘宾徐殿国古天祥更多>>
相关机构：电子科技大学华中科技大学山东大学辽宁师范大学更多>>
相关期刊：《仪器仪表学报》《CES Transactions on Electrical Machines and Systems》《世界电子元器件》《Chinese Journal of Structural Chemistry》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划上海市自然科学基金国家高技术研究发展计划更多>>
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Piezoelectric Field Effect Transistors(Piezo-FETs)for Bionic MEMS Sensors:A Literature Review
《Journal of Bionic Engineering》2024年第6期2717-2729,共13页Chang Ge Huawei Chen 
This paper presents a literature review exploring the potential of piezoelectric field-effect transistors(piezo-FETs)as bionic microelectromechanical systems(MEMS).First,piezo-FETs are introduced as bionic counterpart...
关键词：Bionic MEMS Piezoelectric field-effect transistors Tactile sensor Multi-axis accelerometer Directional microphone 
Unipolar p-type monolayer WSe_(2) field-effect transistors with high current density and low contact resistance enabled by van der Waals contacts被引量：1
《Nano Research》2024年第11期10162-10169,共8页Miaomiao Li Xinyu Zhang Zimei Zhang Gang Peng Zhihong Zhu Jia Li Shiqiao Qin Mengjian Zhu 
financially supported by the National Natural Science Foundation of China(No.12174444);M.Zhu acknowledges the fruitful discussion with Dr.Jinbao Jiang at National University of Defense Technology.
High-performance field-effect transistors (FETs) based on atomically thin two-dimensional (2D) semiconductors have demonstrated great promise in post-Moore integrated circuits. However, unipolar p-type 2D semiconducto...
关键词：two-dimensional(2D)field-effect transistors(FETs) monolayer WSe2 van der Waals(vdW)contact on-state current hole mobility 
High performance 2T0C DRAM cells based on atomic-layer-deposited InAlZnO FETs
《Science China(Information Sciences)》2024年第9期340-341,共2页Wen XIONG Binbin LUO Wei MENG Bao ZHU Xiaohan WU Shi-Jin DING 
supported by National Natural Science Foundation of China(Grant No.61874029)。
Recently,the oxide semiconductor-based 2T0C dynamic random-access memory(DRAM)has shown great potential in monolithic three-dimensional(M3D)-integrated memory,owing to some unique advantages of oxide semiconductors,su...
关键词：MONOLITHIC DRAM compatibility 
Contact engineering for temperature stability improvement of Bi-contacted MoS_(2)field effect transistors被引量：1
《Science China(Information Sciences)》2024年第6期168-175,共8页Zizheng LIU Qing ZHANG Xiaohe HUANG Chunsen LIU Peng ZHOU 
supported by National Natural Science Foundation of China(Grant Nos.61925402,62090032,62004040);National Key Research and Development Program(Grant No.2021YFA1200500);Innovation Program of Shanghai Municipal Education Commission(Grant No.2021-01-07-00-07-E00077);Science and Technology Commission of Shanghai Municipality(Grant No.19JC1416600);Shanghai Pilot Program for Basic Research–Fudan University(Grant No.21TQ1400100(21TQ011));Shanghai Rising-Star Program(Grant No.22QA1400700);the Young Scientist Project of MOE Innovation Platform。
Semimetallic bismuth(Bi)is one of the most effective strategies for reducing the contact resistance of two-dimensional transition metal dichalcogenide field effect transistors(FETs).However,the low melting point of Bi...
关键词：temperature stability semimetallic bismuth contact semimetallic antimony contact MoS_(2)FETs time stability 
Optimizing 2D-metal contact in layered Tin-selenide via native oxide modulation
《Nano Research》2024年第4期3014-3020,共7页Yue Zheng Qi You Zhentian Yin Jian Tang Ke Jiang Zihao Xie Henan Li Cheng Han Yumeng Shi 
support from the National Natural Science Foundation of China(Nos.62004128 and 61874074);the Fundamental Research Foundation of Shenzhen(No.JCYJ20190808152607389);the Science and Technology Project of Shenzhen(No.JCYJ20220531100815034);H.N.L.acknowledges the Guangdong Basic and Applied Basic Research Foundation(No.2022A1515012055).
The discovery of two-dimensional(2D)semiconductor has opened up new avenues for the development of short-channel field-effect transistors(FETs)with desired electrical performance.Among them,orthorhombic tin-selenide(S...
关键词：few-layer SnSe field-effect transistors(FETs) Cr contact native oxide contact resistance(Rc) Schottky barrier(SB) 
Mobile-ionic FETs with ultra-scaled amorphous dielectric achieving ferroelectric behaviors and sub-kT/q swing with temperature down to 77 K
《Science China(Information Sciences)》2024年第1期308-309,共2页Huan LIU Qiyu YANG Chengji JIN Jiajia CHEN Lulu CHOU Xiao YU Yan LIU Genquan HAN 
supported by National Key Research and Development Project(Grant No.2018YFB2200500);National Natural Science Foundation of China(Grant Nos.62025402,62090033,91964202);Major Scientific Research Project of Zhejiang Lab(Grant No.2021MD0AC01);Zhejiang Province Key R&D Programs(Grant Nos.2022C01232,2021C05004)。
The steep subthreshold swing(SS)could be achieved in negative capacitance field-effect transistors(NCFET)to reduce power dissipation in modern electronics.Polycrystalline Hf O2-based ferroelectric materials have attra...
关键词：FERROELECTRIC DIELECTRIC AMORPHOUS 
Recent progress in InGaZnO FETs for high-density 2T0C DRAM applications被引量：1
《Science China(Information Sciences)》2023年第10期57-79,共23页Shengzhe YAN Zhaori CONG Nianduan LU Jinshan YUE Qing LUO 
supported in part by National Key R&D Program(Grant No.2018YFA0208503);National Natural Science Foundation of China(Grant Nos.92264204,61890944);China Postdoctoral Science Foundation(Grant No.2021M703444)。
In the past several decades,the density and performance of transistors in a single chip have been increasing based on Moore's Law.However,the slowdown of feature size reduction and memory wall in the von Neumann archi...
关键词：IGZO FET 2T0C DRAM high density compact modeling computing-in-memory monolithic 3D integration 
High-performance enhancement-mode GaN-based p-FETs fabricated with O_(3)-Al_(2)O_(3)/HfO_(2)-stacked gate dielectric被引量：1
《Journal of Semiconductors》2023年第10期99-103,共5页Hao Jin Sen Huang Qimeng Jiang Yingjie Wang Jie Fan Haibo Yin Xinhua Wang Ke Wei Jianxun Liu Yaozong Zhong Qian Sun Xinyu Liu 
This work was supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics.
In this letter,an enhancement-mode(E-mode)GaN p-channel field-effect transistor(p-FET)with a high current den-sity of−4.9 mA/mm based on a O_(3)-Al_(2)O_(3)/HfO_(2)(5/15 nm)stacked gate dielectric was demonstrated on ...
关键词：GaN p-FETs ENHANCEMENT-MODE HfO_(2) subthreshold swing 
Experimental investigation on the instability for NiO/β-Ga_(2)O_(3) heterojunction-gate FETs under negative bias stress被引量：1
《Journal of Semiconductors》2023年第7期32-36,共5页Zhuolin Jiang Xiangnan Li Xuanze Zhou Yuxi Wei Jie Wei Guangwei Xu Shibing Long Xiaorong Luo 
supported by the Fundamental Strengthening Program Key Basic Research Project(Grant No.2021-173ZD-057).
A NiO/β-Ga_(2)O_(3) heterojunction-gate field effect transistor(HJ-FET)is fabricated and it_(s)instability mechanisms are exper-imentally investigated under different gate stress voltage(V_(G,s))and stress times(t_(s...
关键词：NiO/β-Ga_(2)O_(3)heterojunction FET NBS INSTABILITY bulk traps interface dipoles 
A comprehensive review of recent progress on enhancement-modeβ-Ga_(2)O_(3)FETs:Growth,devices and properties
《Journal of Semiconductors》2023年第6期7-23,共17页Botong Li Xiaodong Zhang Li Zhang Yongjian Ma Wenbo Tang Tiwei Chen Yu Hu Xin Zhou Chunxu Bian Chunhong Zeng Tao Ju Zhongming Zeng Baoshun Zhang 
supported in part by the National Basic Research Program of China(Grant No.2021YFB3600202);Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008);the Suzhou Science and Technology Foundation(Grant No.SYG202027)。
Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As ...
关键词：enhancement mode FETS β-Ga_(2)O_(3) 
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