ENHANCEMENT-MODE

作品数：45被引量：23H指数：2
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相关领域：电子电信更多>>
相关作者：张海英尹军舰叶甜春徐静波刘亮更多>>
相关机构：中国科学院微电子研究所西安电子科技大学更多>>
相关期刊：《Chinese Physics Letters》《CES Transactions on Electrical Machines and Systems》《Science China(Technological Sciences)》《Chinese Physics B》更多>>
相关基金：国家自然科学基金国家重点基础研究发展计划国家教育部博士点基金中国博士后科学基金更多>>
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Flexible printed three dimensional(3D)integrated carbon nanotube complementary metal oxide semiconductor(CMOS)thin film transistors and circuits
《Science China(Information Sciences)》2024年第9期276-289,共14页Zhaofeng CHEN Jiaqi LI Min LI Hongxuan GUO Jianwen ZHAO 
supported by National Key Research and Development Program of China(Grant No.2020YFA0714700);National Natural Science Foundation of China(Grant Nos.62274174,12274073);Key Research and Development Program of Jiangsu Province(Grant No.BK20232009);Cooperation Project of Vacuum Interconnect Research Facility(NANO-X)of Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences(Grant No.F2208)。
The threshold voltage modulation of carbon nanotube thin-film transistors(TFTs)and flexible three-dimensional(3D)integration circuits has become hot research topics for carbon-based electronics.In this paper,a doping-...
关键词：three-dimensional CMOS circuits printing technology polymer-sorted semiconducting carbon nanotubes enhancement-mode thin-film transistors threshold voltage modulation 
Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate
《Journal of Semiconductors》2024年第6期81-86,共6页Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li Qimeng Jiang Xinhua Wang Bin Hou Ling Yang Xiaohua Ma Xinyu Liu 
supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics.
Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron g...
关键词：AlGaN/GaN heterostructure ultrathin-barrier ENHANCEMENT-MODE RADIO-FREQUENCY power added efficiency silicon substrate 
Low-damage interface enhancement-mode AlN/GaN high electron mobility transistors with 41.6% PAE at 30 GHz
《Chinese Physics B》2023年第11期570-574,共5页刘思雨 祝杰杰 郭静姝 程凯 宓珉瀚 秦灵洁 张博文 唐旻 马晓华 
Project supported by the Fundamental Research Funds for the National Key Research and Development Program, China (Grant No. 2020YFB1807403);the National Natural Science Foundation of China (Grant Nos. 62174125, 62188102, and 62131014)。
This paper reports a low-damage interface treatment process for Al N/Ga N high electron mobility transistor(HEMT)and demonstrates the excellent power characteristics of radio-frequency(RF) enhancementmode(E-mode) Al N...
关键词：GAN low damage enhancement mode power-added efficiency 
Study of enhancement-mode GaN pFET with H plasma treated gate recess被引量：1
《Journal of Semiconductors》2023年第11期63-68,共6页Xiaotian Gao Guohao Yu Jiaan Zhou Zheming Wang Yu Li Jijun Zhang Xiaoyan Liang Zhongming Zeng Baoshun Zhang 
supported by the Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2020321);the National Natural Science Foundation of China(Grant No.92163204).
This letter showcases the successful fabrication of an enhancement-mode(E-mode)buried p-channel GaN fieldeffect-transistor on a standard p-GaN/AlGaN/GaN-on-Si power HEMT substrate.The transistor exhibits a threshold v...
关键词：GaN pFET E-mode H plasma treatment ION/IOFF ratio 
High-performance enhancement-mode GaN-based p-FETs fabricated with O_(3)-Al_(2)O_(3)/HfO_(2)-stacked gate dielectric被引量：1
《Journal of Semiconductors》2023年第10期99-103,共5页Hao Jin Sen Huang Qimeng Jiang Yingjie Wang Jie Fan Haibo Yin Xinhua Wang Ke Wei Jianxun Liu Yaozong Zhong Qian Sun Xinyu Liu 
This work was supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics.
In this letter,an enhancement-mode(E-mode)GaN p-channel field-effect transistor(p-FET)with a high current den-sity of−4.9 mA/mm based on a O_(3)-Al_(2)O_(3)/HfO_(2)(5/15 nm)stacked gate dielectric was demonstrated on ...
关键词：GaN p-FETs ENHANCEMENT-MODE HfO_(2) subthreshold swing 
High threshold voltage enhancement-mode GaN p-FET with Sirich LPCVD SiN_(x) gate insulator for high hole mobility被引量：1
《Journal of Semiconductors》2023年第8期78-86,共9页Liyang Zhu Kuangli Chen Ying Ma Yong Cai Chunhua Zhou Zhaoji Li Bo Zhang Qi Zhou 
This work was supported in part by the Natural Science Foundation of China under Grant 62174019;in part by the Guangdong Basic and Applied Basic Research Foundation China under Grant 2021B1515140039;in part by the Zhuhai Industry-University Research Cooperation Project under Grant ZH22017001210041PWC.
In this work,the GaN p-MISFET with LPCVD-SiN_(x) is studied as a gate dielectric to improve device performance.By changing the Si/N stoichiometry of SiN_(x),it is found that the channel hole mobility can be effectivel...
关键词：p-channel GaN p-FET LPCVD channel mobility hole mobility ENHANCEMENT-MODE 
A comprehensive review of recent progress on enhancement-modeβ-Ga_(2)O_(3)FETs:Growth,devices and properties
《Journal of Semiconductors》2023年第6期7-23,共17页Botong Li Xiaodong Zhang Li Zhang Yongjian Ma Wenbo Tang Tiwei Chen Yu Hu Xin Zhou Chunxu Bian Chunhong Zeng Tao Ju Zhongming Zeng Baoshun Zhang 
supported in part by the National Basic Research Program of China(Grant No.2021YFB3600202);Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008);the Suzhou Science and Technology Foundation(Grant No.SYG202027)。
Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As ...
关键词：enhancement mode FETS β-Ga_(2)O_(3) 
Study on a novel vertical enhancement-mode Ga_(2)O_(3) MOSFET with FINFET structure
《Chinese Physics B》2022年第1期547-552,共6页Liangliang Guo Yuming Zhang Suzhen Luan Rundi Qiao Renxu Jia 
the National Natural Science Foundation of China(Grant Nos.61974119,51602241,and 61834005);the Natural Science Foundation of Shannxi Province,China(Grant No.2020JM-532);the Science Foundation of Xi’an University of Science and Technology(Grant No.2018QDJ036).
A novel enhanced mode(E-mode)Ga_(2)O_(3) metal-oxide-semiconductor field-effect transistor(MOSFET)with vertical FINFET structure is proposed and the characteristics of that device are numerically investigated.It is fo...
关键词：gallium oxide E-mode device simulation threshold voltage 
An Improved Active Miller Clamp Crosstalk Suppression Method for Enhancement-Mode GaN HEMTs in Phase-Leg Configuration
《Transactions of Nanjing University of Aeronautics and Astronautics》2021年第5期758-768,共11页QIN Haihong WANG Wenlu BU Feifei PENG Zihe LIU Ao BAI Song 
supported by the Foundation of State Key Laboratory of Wide-Bandgap Semi-conductor Power Electronic Devices(No.2019KF001);National Natural Science Foundation of China(No.51677089)。
When using traditional drive circuits,the enhancement-mode GaN(eGaN)HEMT will be affected by high switching speed characteristics and parasitic parameters leading to worse crosstalk problems.Currently,the existing cro...
关键词：enhancement-mode GaN(eGaN) crosstalk suppression gate driver high-speed switching active clamp 
High-frequency enhancement-mode millimeterwave AlGaN/GaN HEMT with an fT/fmax over 100 GHz/200 GHz
《Chinese Physics B》2021年第8期444-448,共5页Sheng Wu Minhan Mi Xiaohua Ma Ling Yang Bin Hou Yue Hao 
Project supported by the National Key Research and Development Program of China(Grant No.2020YFB1804902);the National Natural Science Foundation of China(Grant No.61904135);the China Postdoctoral Science Foundation(Grant Nos.2018M640957 and BX20200262);the Natural Science Foundation of Shaanxi Province,China(Grant No.2020JQ-316).
Ultra-thin barrier(UTB) 4-nm-Al Ga N/Ga N normally-off high electron mobility transistors(HEMTs) having a high current gain cut-off frequency( fT) are demonstrated by the stress-engineered compressive Si N trench tech...
关键词：ultra-thin barrier(UTB) AlGaN/GaN in-situ SiN stress-engineering ENHANCEMENT-MODE mixed-signal applications 
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