A comprehensive review of recent progress on enhancement-modeβ-Ga_(2)O_(3)FETs:Growth,devices and properties  

作　　者：Botong Li Xiaodong Zhang Li Zhang Yongjian Ma Wenbo Tang Tiwei Chen Yu Hu Xin Zhou Chunxu Bian Chunhong Zeng Tao Ju Zhongming Zeng Baoshun Zhang 

机构地区：[1]School of Nano Technology and Nano Bionics,University of Science and Technology of China,Hefei 230026,China [2]Nano Fabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Journal of Semiconductors》2023年第6期7-23,共17页半导体学报（英文版）

基　　金：supported in part by the National Basic Research Program of China(Grant No.2021YFB3600202);Key Laboratory Construction Project of Nanchang(Grant No.2020-NCZDSY-008);the Suzhou Science and Technology Foundation(Grant No.SYG202027)。

摘　　要：Power electronic devices are of great importance in modern society.After decades of development,Si power devices have approached their material limits with only incremental improvements and large conversion losses.As the demand for electronic components with high efficiency dramatically increasing,new materials are needed for power device fabrication.Betaphase gallium oxide,an ultra-wide bandgap semiconductor,has been considered as a promising candidate,and variousβ-Ga_(2)O_(3)power devices with high breakdown voltages have been demonstrated.However,the realization of enhancement-mode(E-mode)β-Ga_(2)O_(3)field-effect transistors(FETs)is still challenging,which is a critical problem for a myriad of power electronic applications.Recently,researchers have made some progress on E-modeβ-Ga_(2)O_(3)FETs via various methods,and several novel structures have been fabricated.This article gives a review of the material growth,devices and properties of these E-modeβ-Ga_(2)O_(3)FETs.The key challenges and future directions in E-modeβ-Ga_(2)O_(3)FETs are also discussed.

关 键 词：enhancement mode FETS β-Ga_(2)O_(3) 

分 类 号：TN386[电子电信—物理电子学]