Recess-free enhancement-mode AlGaN/GaN RF HEMTs on Si substrate  

作　　者：Tiantian Luan Sen Huang Guanjun Jing Jie Fan Haibo Yin Xinguo Gao Sheng Zhang Ke Wei Yankui Li Qimeng Jiang Xinhua Wang Bin Hou Ling Yang Xiaohua Ma Xinyu Liu 

机构地区：[1]High-Frequency High-Voltage Device and Integrated Circuits R&D Center,Institute of Microelectronics of Chinese Academy of Sciences,Be i-jing 100029,China [2]School of integrated Circuits,University of Chinese Academy of Sciences,Beijing 100049,China [3]Faculty of integrated Circuits,Xidian University,Xi’an 710071,China

出　　处：《Journal of Semiconductors》2024年第6期81-86,共6页半导体学报（英文版）

基　　金：supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics.

摘　　要：Enhancement-mode(E-mode)GaN-on-Si radio-frequency(RF)high-electron-mobility transistors(HEMTs)were fabri-cated on an ultrathin-barrier(UTB)AlGaN(<6 nm)/GaN heterostructure featuring a naturally depleted 2-D electron gas(2DEG)channel.The fabricated E-mode HEMTs exhibit a relatively high threshold voltage(VTH)of+1.1 V with good uniformity.A maxi-mum current/power gain cut-off frequency(fT/fMAX)of 31.3/99.6 GHz with a power added efficiency(PAE)of 52.47%and an out-put power density(Pout)of 1.0 W/mm at 3.5 GHz were achieved on the fabricated E-mode HEMTs with 1-μm gate and Au-free ohmic contact.

关 键 词：AlGaN/GaN heterostructure ultrathin-barrier ENHANCEMENT-MODE RADIO-FREQUENCY power added efficiency silicon substrate 

分 类 号：TN3[电子电信—物理电子学]