High-performance enhancement-mode GaN-based p-FETs fabricated with O_(3)-Al_(2)O_(3)/HfO_(2)-stacked gate dielectric  

作　　者：Hao Jin Sen Huang Qimeng Jiang Yingjie Wang Jie Fan Haibo Yin Xinhua Wang Ke Wei Jianxun Liu Yaozong Zhong Qian Sun Xinyu Liu 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China [2]University of Chinese Academy of Sciences,Beijing 100049,China [3]Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China

出　　处：《Journal of Semiconductors》2023年第10期99-103,共5页半导体学报（英文版）

基　　金：This work was supported in part by the National Key Research and Development Program of China under Grant 2022YFB3604400;in part by the Youth Innovation Promotion Association of Chinese Academy Sciences(CAS);in part by CAS-Croucher Funding Scheme under Grant CAS22801;in part by National Natural Science Foundation of China under Grant 62074161,Grant 62004213,and Grant U20A20208;in part by the Beijing Municipal Science and Technology Commission project under Grant Z201100008420009 and Grant Z211100007921018;in part by the University of CAS;in part by IMECAS-HKUST-Joint Laboratory of Microelectronics.

摘　　要：In this letter,an enhancement-mode(E-mode)GaN p-channel field-effect transistor(p-FET)with a high current den-sity of−4.9 mA/mm based on a O_(3)-Al_(2)O_(3)/HfO_(2)(5/15 nm)stacked gate dielectric was demonstrated on a p++-GaN/p-GaN/AlN/AlGaN/AlN/GaN/Si heterostructure.Attributed to the p++-GaN capping layer,a good linear ohmic I−V characteristic fea-turing a low-contact resistivity(ρc)of 1.34×10^(−4)Ω·cm^(2) was obtained.High gate leakage associated with the HfO_(2)high-k gate dielectric was effectively blocked by the 5-nm O_(3)-Al_(2)O_(3)insertion layer grown by atomic layer deposition,contributing to a high ION/IOFF ratio of 6×10^(6)and a remarkably reduced subthreshold swing(SS)in the fabricated p-FETs.The proposed structure is compelling for energy-efficient GaN complementary logic(CL)circuits.

关 键 词：GaN p-FETs ENHANCEMENT-MODE HfO_(2) subthreshold swing 

分 类 号：TN386[电子电信—物理电子学]